AVS 46th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoP

Paper PS-MoP35
Ultra-shallow n+/p and p+/n Junctions formed by Plasma Immersion Ion Implantation

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: J.D. Bernstein, Eaton Corp.
Authors: J.D. Bernstein, Eaton Corp.
P.L. Kellerman, Eaton Corp.
W. Krull, Eaton Corp.
Yu. Erokhin, Eaton Corp.
P. Frisella, Eaton Corp.
M.J. Rendon, Motorola APRDL/Sematech
Correspondent: Click to Email
Plasma immersion ion implantation (PIII) is an emerging method being developed for shallow junction formation and other low energy, high dose ion implantation applications. The PIII process consists of placing a Si wafer in a plasma containing a desired dopant species and pulse-biasing the wafer to negative potentials in order to accelerate and implant dopant ions. In this work, BF@sub 3@, PH@sub 3@, and AsH@sub 3@ PIII are used for formation of ultra-shallow n+/p and p+/n junctions. As-implanted boron profiles produced from 2 to 10 kV BF@sub 3@ PIII are compared to those from mass-analyzed BF@sub 2@ implantation. The differences in the dopant profiles are attributed to the PIII ion energy distribution and the BF@sub 3@ plasma species composition. The relationship between sheet resistance and junction depth is investigated for PIII and mass-analyzed implants processed with a 1050 @super o@C spike anneal. Both n+/p and p+/n junctions produced by PIII meet S/D junction requirements of the National Technology Roadmap for Semiconductors (NTRS) for 70 nm CMOS devices.