AVS 55th International Symposium & Exhibition
    Plasma Science and Technology Friday Sessions

Session PS2-FrM
Plasma Processing for 3-D Integration, Photonics, Optoelectronics, and Memory Devices

Friday, October 24, 2008, 8:20 am, Room 306
Moderator: C.C. Hsu, National Taiwan University


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS2-FrM1
Silicon Oxide Sidewall Passivation during HBr Inductively Coupled Plasma (ICP) Etching of InP and GaAs Materials for the Fabrication of Photonic Devices
S. Bouchoule, S. Guilet, L. Gatilova, G. Patriarche, L. Largeau, LPN, CNRS, France, P. Chabert, LPTP, CNRS - Ecole Polytechnique, France
8:40am PS2-FrM2
Low Bias Inductively Coupled Plasma Etching of CdHgTe in CH4/H2 Based Chemistry
F. Boulard, C. Cardinaud, IMN CNRS France, J. Baylet, LETI-CEA, MINATEC France
9:00am PS2-FrM3
Characterisation of InP Ridge Sidewalls Patterned in Inductively Coupled Halogen Plasmas
C. Cardinaud, IMN-CNRS, France, S. Bouchoule, LPN-CNRS, France
9:20am PS2-FrM4
The Plasma Polymerization of Novel Metal Containing Monomers Via Sublimation of the Precursor Materials
J.O. Enlow, UES, Inc., H. Jiang, Materials Sci. and Tech Applications, LLC, J.T. Grant, University of Dayton, K.G. Eyink, Air Force Research Laboratory, W. Su, AT&T Government Solutions, A.M. Urbas, T.J. Bunning, Air Force Research Laboratory
9:40am PS2-FrM5 Invited Paper
Advancement and Characterization of 3D TSV Etch Applications
C. Rusu, Lam Research
10:20am PS2-FrM7
Investigation of Bottom Profile Degradation Mechanism in Extremely High-Aspect-Ratio Feature Etching
N. Negishi, M. Miyake, K. Yokogawa, Hitachi, Ltd., Japan, M. Oyama, T. Kanekiyo, Hitachi High-Technologies Corporation, Japan, M. Izawa, Hitachi, Ltd., Japan
10:40am PS2-FrM8
Very Uniform and High Rate Si Etching Process in Advanced NLD Plasma
Y. Morikawa, T. Murayama, K. Suu, ULVAC, Inc., Japan
11:00am PS2-FrM9
Fabrication of Very High Aspect Ratio Vertical Through Silicon Via by a Novel Multi-step Plasma Etching Technique
P. Dixit, Nanyang Technological University, Singapore, R. Chatterjee, Georgia Institute of Technology, J. Miao, Nanyang Technological University, Singapore, R. Tummala, Georgia Institute of Technology
11:20am PS2-FrM10
Through Silicon Via Etching for 3-D Interconnection using Pulse Inductively Coupled Plasma
S.H. Lee, Y.D. Lim, W.J. Yoo, Sungkyunkwan University, Korea, O. Jung, S.C. Kim, H.C. Lee, Dongbuhitek, Korea