| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Friday Sessions |
| Session PS2-FrM |
| Session: | Plasma Processing for 3-D Integration, Photonics, Optoelectronics, and Memory Devices |
| Presenter: | S.H. Lee, Sungkyunkwan University, Korea |
| Authors: | S.H. Lee, Sungkyunkwan University, Korea Y.D. Lim, Sungkyunkwan University, Korea W.J. Yoo, Sungkyunkwan University, Korea O. Jung, Dongbuhitek, Korea S.C. Kim, Dongbuhitek, Korea H.C. Lee, Dongbuhitek, Korea |
| Correspondent: | Click to Email |
Deep Silicon via etching technology is considered to be a critical and important factor to connect three-dimensional (3D) integrated-circuit system. In this process, the formation of deep Si via etching profiles is an important factor to accomplish filling of the highly conductive metal-materials and operating device in package level. We studied a non-Bosch type deep etching method using the pulse inductively coupled plasma (ICP) for the purpose of improving high aspect-ratio etching profile and reducing undercut at the entrance of the Si vias. We used an ICP etcher (ICP) in which wafer electrode is equipped with pulsing RF bias power which enabled the control of frequency, duty cycle and thereby was expected to affect ion acceleration onto the wafer surface and sidewall passivation of SiOxFy. SF6, O2, and Ar were used to accomplish deep non-Bosch –type Si etching for the pulse plasma discharge. To understand the effects of radicals in the plasma on the formation of etching profiles of deep Si vias, we monitored optical emission of radicals at 419.6 nm for Ar, 703.6 nm for F, and 777.0nm for O.