AVS 55th International Symposium & Exhibition | |
Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
1:40pm | PS1-WeA1 Adsorption and Desorption Dynamics of Atomic and Molecular Chlorine on Plasma-Conditioned Stainless Steel Surfaces L. Stafford, Université de Montréal, Canada, R. Khare, J. Guha, V.M. Donnelly, University of Houston, J.S. Poirier, J. Margot, Université de Montréal, Canada |
2:00pm | PS1-WeA2 Effect of Cu Contamination on Recombination of O Atoms on Plasma Conditioned Surfaces J. Guha, R. Khare, V.M. Donnelly, University of Houston, L. Stafford, Universite de Montreal, Canada, S. Sirard, D. Wei, G. Delgadino, E.A. Hudson, Lam Research Corporation |
2:20pm | PS1-WeA3 Impact on Wafer to Wafer Repetability of Cleanning/Coating Strategies in a 300mm ICP Plasma Reactor L. Babaud, ST Microelectronics/CNRS-LTM France, P. Gouraud, ST Microelectronics France, O. Joubert, E. Pargon, CNRS-LTM France |
2:40pm | PS1-WeA4 Invited Paper Synergistic Mechanisms of Plasma-Polymer Interactions D.B. Graves, University of California at Berkeley |
4:00pm | PS1-WeA8 Fluorination Mechanisms of Al2O3 and Y2O3 Surfaces by Irradiations of High Density CF4/O2 and SF6/O2 Plasmas K. Miwa, N. Takada, K. Sasaki, Nagoya University, Japan |
4:20pm | PS1-WeA9 193 nm Resist Modification Induced by Ballistic Electrons in a DC+RF Hybrid Etcher M. Honda, Tokyo Electron AT Limited, Japan, K. Yatsuda, Tokyo Electron Limited, Japan, L. Chen, Tokyo Electron America Inc. |
4:40pm | PS1-WeA10 Impact of UV Plasma Light on Photoresist Pattern Linewidth Roughness during Gate Etch Processes E. Pargon, M. Martin, K. Menguelti, X. Mellhaoui, A. Bazin, O. Joubert, LTM/CNRS, France, J. Foucher, LETI/CEA, France |
5:00pm | PS1-WeA11 Influences of UV Photon Irradiation to ArF Resist during Plasma Etching Processes K. Koyama, B. Jinnnai, S. Samukawa, Tohoku University, Japan |
5:20pm | PS1-WeA12 Role of Ion Bombardment Energy in Surface Roughening during Plasma Etching of Polymers and Silicon Y.H. Ting, C.C. Liu, X. Liu, H.Q. Jiang, F.J. Himpsel, P.F. Nealey, A.E. Wendt, University of Wisconsin-Madison |