| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS-TuM1 High Density Plasma Etching of Titanium Nitride Metal Gate Electrodes for FDSOI Sub-Threshold Transistor Integration S.A. Vitale, J. Kedzierski, N. Checka, C.L. Keast, MIT Lincoln Laboratory |
| 8:20am | PS-TuM2 TaN Etch Mechanisms in BCl3-based Plasmas D. Shamiryan, IMEC, Belgium, A. Danila, Moscow Institute of Electronic Technology, Russia, V. Paraschiv, M.R. Baklanov, W. Boullart, IMEC, Belgium |
| 8:40am | PS-TuM3 Etching Profile Simulation of Metal/High-k Dielectric HfO2 in Chlorine Based Chemistry T. Yagisawa, T. Makabe, Keio University, Japan |
| 9:00am | PS-TuM4 Reaction Mechanisms in Patterning Hafnium-Based High-k Thin Films R.M. Martin, J.P. Chang, University of California, Los Angeles |
| 9:20am | PS-TuM5 Invited Paper Etch Challenges at the 22nm Node and Beyond R. Turkot, Intel Corporation |
| 10:40am | PS-TuM9 Etch Mechanisms of Silicon Gate Structures Patterned in SF6/CH2F2 Inductively Coupled Plasmas O. Luere, Freescale Semiconductors, France, L. Vallier, E. Pargon, O. Joubert, LTM-CNRS, France |
| 11:00am | PS-TuM10 Reduction of Si Recess during Gate Etching with RLSA Microwave Plasma Source T. Mori, M. Sasaki, T. Nishizuka, T. Nozawa, Tokyo Electron Technology Development Institute, INC., Japan |
| 11:20am | PS-TuM11 Effect of Inductively and Capacitively Coupled Plasma Pulsing on Charging of Features in Plasma Etching A. Agarwal, P.J. Stout, S. Banna, S. Rauf, K. Collins, Applied Materials Inc. |