| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | TF+EM+MI-TuM1 Invited Paper Monolithic Integration of III-Vs on Si for Electronic and Photonic Applications P. Staudinger, S. Mauthe, N. Vico Trivino, N. Sousa, C. Convertino, Y. Baumgartner, P. Tiwari, H. Schmid, Kirsten Moselund, IBM Research Zurich, Switzerland |
| 8:40am | TF+EM+MI-TuM3 A Scheme for Better Future Technology by developing AlGaN based Highly Responsive Photosensing Devices Neha Aggarwal, S. Krishna, L. Goswami, G. Gupta, CSIR-National Physical Laboratory, India |
| 9:00am | TF+EM+MI-TuM4 Correlating the Optical Property Evolution in the Au-Ni Binary Thin Films: From Metastable Solid Solution to Phase Separated Alloy Robyn Collette, Y. Wu, P.D. Rack, University of Tennessee Knoxville |
| 9:20am | TF+EM+MI-TuM5 Integration of Electro-optically Active BaTiO3 and BaxSr1-xTiO3 with Buffered Si (001) by Chemical Methods John G. Ekerdt, B.I. Edmondson, E. Lin, University of Texas at Austin, S. Kwon, University of Texas at Dallas, A.A. Demkov, University of Texas at Austin, M.J. Kim, University of Texas at Dallas |
| 9:40am | TF+EM+MI-TuM6 Nonlinear Optical Properties of TiO2-based ALD Thin Films Theodosia Gougousi, R. Kuis, I. Basaldua, P. Burkins, J.A. Kropp, A.M. Johnson, University of Maryland, Baltimore County |
| 11:00am | TF+EM+MI-TuM10 Atomic Layer Deposition on Hexagonal Ge and SiGe Nanowires for Surface Passivation Willem-Jan Berghuis, Department of Applied Physics, Eindhoven University of Technology, Postbus 513, 5600 MB Eindhoven, The Netherlands, W.M.M. Kessels, J.E.M. Haverkort, E.P.A.M. Bakkers, A. Dijkstra, Eindhoven University of Technology, The Netherlands, E.M.T. Fadaly, Eindhoven University of Technology, The Netherlands, M.A. Verheijen, Eindhoven University of Technology, The Netherlands |
| 11:20am | TF+EM+MI-TuM11 Oxidation Studies of Silicon Germanium (SiGe) using In-Situ Steam Generated (ISSG) and Plasma Enhanced Atomic Layer Deposited (PEALD) Oxides Yi Song, S. Siddiqui, C. Durfee, A. Pana, J. Li, M. Belyansky, S. Naczas, E.P. Stuckert, L. Jiang, J. Demarest, V. Basker, D. Guo, H. Bu, IBM Research Division, Albany, NY |
| 11:40am | TF+EM+MI-TuM12 Precision Defect Engineering of Metal/Insulator/Metal (MIM) Diodes using Localized ALD Transition Metal Impurities in Al2O3 Tunnel Barriers Konner Holden, Y. Qi, J.F. Conley, Jr., Oregon State University |
| 12:00pm | TF+EM+MI-TuM13 Improvement in the Electrical Characteristics of a-ZTO based TFTs via Microwave Assisted Annealing of Channel Layer Sunil Uprety, M.P. Khanal, H. Lee, S. Sarwar, Auburn University, A. Subramanian, Stony Brook University, E. Hassani, T.S. Oh, X. Zhang, Auburn University, C.Y. Nam, Brookhaven National Laboratory, M. Park, Auburn University |