| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
| Session TF+EM+MI-TuM |
| Session: | Thin Films for Microelectronics, Photonics, and Optoelectronic Applications |
| Presenter: | Sunil Uprety, Auburn University |
| Authors: | S. Uprety, Auburn University M.P. Khanal, Auburn University H. Lee, Auburn University S. Sarwar, Auburn University A. Subramanian, Stony Brook University E. Hassani, Auburn University T.S. Oh, Auburn University X. Zhang, Auburn University C.Y. Nam, Brookhaven National Laboratory M. Park, Auburn University |
| Correspondent: | Click to Email |
In this research, we have investigated the effect of microwave-assisted annealing of amorphous zinc tin oxide (a-ZTO) channel layers on the electrical characteristics of the thin film transistors (TFTs). A multi-stacked a-ZTO layer was deposited on the oxidized Si wafer using sol-gel process. The precursor solution was prepared by dissolving zinc acetate dihydrate and tin chloride dihydrate into methoxyethanol. The solution was spin coated and calcined in a hot plate at 285°C. The as-calcined a-ZTO wafers were microwave annealed. The microwave (MW) annealing was carried on a commercial microwave oven at different power levels with the sample placed in a kiln which acts as a susceptor. The films remained amorphous even after MW annealing, which was evidenced by X-ray diffraction. The devices were fabricated using the microwave-annealed and as-calcined samples. Hall measurement is being carried out to study the concentration and mobility of charge carries. The performance of the TFTs with as-calcined and MW annealed channel layers were compared. Improvement in the electrical characteristics of the TFTs with MW annealed films were noted. It is believed that the microwave irradiation may promote the enhancement of the electrical characteristics of TFTs. Further research is being pursued to elucidate the role of microwave annealing in improvement of the device performance.