| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
| Session TF+EM+MI-TuM |
| Session: | Thin Films for Microelectronics, Photonics, and Optoelectronic Applications |
| Presenter: | Kirsten Moselund, IBM Research Zurich, Switzerland |
| Authors: | P. Staudinger, IBM Research Zurich, Switzerland S. Mauthe, IBM Research Zurich, Switzerland N. Vico Trivino, IBM Research Zurich, Switzerland N. Sousa, IBM Research Zurich, Switzerland C. Convertino, IBM Research Zurich, Switzerland Y. Baumgartner, IBM Research Zurich, Switzerland P. Tiwari, IBM Research Zurich, Switzerland H. Schmid, IBM Research Zurich, Switzerland K.E. Moselund, IBM Research Zurich, Switzerland |
| Correspondent: | Click to Email |
For more than half a century researcher have been working on monolithic integration of III-V materials on Si in order to achieve seamless integration of III-V with Si CMOS. Progress has been made in recent years for example on nanowires [1], aspect ratio trapping (ART) [2] and other selective growth techniques suitable for III-V device integration. Here, I will discuss our work on Template-Assisted Selective Epitaxy (TASE) [3], as a novel epitaxial technique where III-V nanostructures are grown within an oxide template.
In this method we first use a combination of lithography and etching to define our structures in Si. These might be vertical or lateral nanowires, or more exotic shapes such as hall-bars, rings and disks. The Si features are covered by an oxide, which is opened locally, and the Si is partially etched exposing a Si nucleation seed within a hollow oxide cavity (template). The template is subsequently filled by metal-organic chemical vapor deposition (MOCVD) grown III-V material. The geometries of the III-V features are lithographically defined by the shape of the hollow template and to a large extent independent of growth conditions.
The versatility of this technique will be shown through several experimentally demonstrated devices, such as InGaAs MOSFETs [4], heterojunction tunnel FETs [5] and monolithically integrated room temperature optically pumped GaAs [6] and InP microdisk lasers [7].
The quality of the TASE-grown material is assessed by high-resolution scanning transmission electron microscopy (HR-STEM). Devices are free from propagating defects and dislocations, but stacking faults are present as expected for selective epitaxy. By controlling the twinning, we were successful in demonstrating pure wurtzite InP micro-substrates for the first time. We also compare lasing performance to that of devices based on defect-free bonded material, which currently represents the state-of-the-art in terms of photonic integration.
This work received funding from H2020 ERC project PLASMIC (Grant No. 678567), SiLAS (Grant No. 735008) and the SNF (Project 200021_156746).
1. B. Mayer et al., Nano Lett., vol. 16, no. 1, pp. 152–156, 2016.
2. Z. Wang et al., Nat. Photonics, vol. 9, pp. 837–842, 2015.
3. H. Schmid et al. Appl. Phys. Lett. 2015, 106 (23), 233101.
4. L. Czornomaz et al., Symp. VLSI Tech., 2015, pp. T172–T173, 2015.
5. Cutaia, D. et al., Symp. VLSI Tech., pp. 403-407, (2016).
6. S. Wirths et al., ACS Nano 12 (3), pp. 2169, 2018.
7. S. Mauthe et al., submitted to IEEE J. Sel. Top. Quantum Electron. (2019).
8. M. Sousa et al. , 2018 IEEE Nano, DOI: 10.1109/NANO.2018.8626223
9. P. Staudinger et al., Nano Letters, vol. 18 (12), 7856, 2018.