| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS+EM+SE-TuM1 Development and Understanding of Isotropic Etching Process of Si Selectively to Si0.7Ge0.3 Sana Rachidi, A. Campo, V. Loup, CEA-LETI, France, N. Posseme, CEA, LETI, France, J.M. Hartmann, S. Barnola, CEA-LETI, France |
| 8:20am | PS+EM+SE-TuM2 III-V/Ge Heterostructure Etching for Through Cell Via Contact Multijunction Solar Cell Mathieu de Lafontaine, G. Gay, C. Petit-Etienne, E. Pargon, LTM, Univ. Grenoble Alpes, CEA-LETI, France, M. Darnon, A. Jaouad, M. Volatier, S. Fafard, V. Aimez, 3IT, Univ. de Sherbrooke, Canada |
| 8:40am | PS+EM+SE-TuM3 Feature Scale Modeling of Etching of High Aspect Ratio Silicon Structures in Pulsed Plasmas Wei Tian, J.-C. Wang, S. Sadighi, J. Kenny, S. Rauf, Applied Materials |
| 9:00am | PS+EM+SE-TuM4 Plasma Etching of High Aspect Ratio Oxide-Nitride-Oxide Stacks S. Huang, C. Hurard, University of Michigan, S. Nam, S. Shim, W. Ko, Samsung Electronics Co., Ltd., Republic of Korea, Mark Kushner, University of Michigan |
| 9:20am | PS+EM+SE-TuM5 Etch Profile Evolution in Poly-silicon using Halogen Containing Plasmas for Next Generation Device Fabrication Shyam Sridhar, S.A. Voronin, P. Biolsi, A. Ranjan, TEL Technology Center, America, LLC |
| 9:40am | PS+EM+SE-TuM6 Flux and Energy of Reactive Species Arriving at the Etch Front in High Aspect Ratio Features During Plasma Etching of SiO2 in Ar/CF4/CHF3 Mixtures Soheila Mohades, University of Michigan, M. Wang, A. Mosden, TEL Technology Center America, LLC, M.J. Kushner, University of Michigan |
| 11:00am | PS+EM+SE-TuM10 Invited Paper Wafer-scale Fabrication of Suspended Graphene Nanoribbon Arrays -from Growth Dynamics to Optoelectrical Applications- Toshiaki Kato, T. Kaneko, Tohoku University, Japan |
| 11:40am | PS+EM+SE-TuM12 Investigation of Surface Reactions for GeSbTe-based Phase Change Material: From Etching to Final Sealing Process Yann Canvel, S. Lagrasta, STMicroelectronics, France, C. Boixaderas, S. Barnola, CEA-LETI, France, E. Martinez, CEA/LETI-University Grenoble Alpes, France |
| 12:00pm | PS+EM+SE-TuM13 Behaviors of Charged Species in Afterglow of Dual Frequency Pulsed Capacitively Coupled Plasma with a Synchronous Negative DC-bias Takayoshi Tsutsumi, T. Ueyama, K. Ishikawa, H. Kondo, M. Sekine, Nagoya University, Japan, Y. Ohya, Tokyo Electron Miyagi Limited, M. Hori, Nagoya University, Japan |