| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
| Session PS+EM+SE-TuM |
| Session: | Plasma Processing of Challenging Materials - I |
| Presenter: | Toshiaki Kato, Tohoku University, Japan |
| Authors: | T. Kato, Tohoku University, Japan T. Kaneko, Tohoku University, Japan |
| Correspondent: | Click to Email |
Graphene nanoribbons (GNRs) combine the unique electronic and spin properties of graphene with a transport gap that arises from quantum confinement and edge effects. This makes them an attractive candidate material for the channels of next-generation transistors. However, the reliable site and alignment control of nanoribbons with high on/off current ratios remains a challenge. We have developed a new, simple, scalable method based on novel plasma catalytic reaction [1-5] for directly fabricating narrow GNRs devices with a clear transport gap [6]. Since the establishment of our novel GNR fabrication method, direct conversion of a Ni nanobar to a suspended GNR is now possible. Indeed, GNRs can be grown at any desired position on an insulating substrate without any post-growth treatment, and the wafer-scale synthesis of suspended GNR arrays with a very high yield (over 98%) is realized [7]. The growth dynamics of suspended GNR is also investigated through the systematic experimental study combined with molecular dynamics simulation and theoretical calculations for phase diagram analysis. The improvement of thermal stability of Ni nanobar can be a key to realize the GNR nucleation in our method, which can be given by supplying higher density of carbon from plasma to liquid-phase Ni nanobar. The wettability of liquid-phase Ni nanobar against to the SiO2 substrate is also found to be an important factor forming the suspended structure of GNR. It is also revealed that the minimum length of GNR can be decided by the wavelength of Plateau-Rayleigh instability known as a traditional instability of fluid flow. We believe that our results can contribute to pushing the study of atomically thin layered materials from basic science into a new stage related to the optoelectrical applications [8-10] in industrial scale.
References
[1] T. Kato and R. Hatakeyama, J. Am. Chem. Soc. 130 (2008) 8101.
[2] T. Kato and R. Hatakeyama, ACS Nano 4 (2010) 7395.
[3] T. Kato and R. Hatakeyama, ACS Nano 6 (2012) 8508.
[4] T. Kato and R. Hatakeyama, ACS Nano 4 (2010) 7395.
[5] B. Xu, T. Kaneko, Y. Shibuta, T. Kato, Scientific Reports 7 (2017) 11149.
[6] T. Kato and R. Hatakeyama, Nature Nanotechnology 7 (2012) 651.
[7] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa, and T. Kato, Nature Communications 7 (2016) 11797.
[8] T. Kato and T. Kaneko, ACS Nano 8 (2014) 12777.
[9] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, T. Kato, Scientific Reports 7 (2017) 11967.
[10] T. Kato and T. Kaneko, ACS Nano 10 (2016) 9687.