AVS 63rd International Symposium & Exhibition
    Plasma Science and Technology Monday Sessions

Session PS-MoA
Advanced BEOL/Interconnect Etching

Monday, November 7, 2016, 1:40 pm, Room 104B
Moderator: Hisataka Hayashi, Toshiba, Japan


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

1:40pm PS-MoA1
The Search for New Multi-Pattern Etch Colors: Usual (SiO2, SiN, SiC) and Unusual (hi-k, BN, BC:H) Suspects
Michelle Paquette, S. Dhungana, B.J. Nordell, A.N. Caruso, University of Missouri-Kansas City, W.A. Lanford, University at Albany, G. Chollon, C. Pallier, F. Teyssandier, Universite de Bordeaux, France, K. Scharfenberger, D. Jacob, S.W. King, Intel Corporation
2:00pm PS-MoA2
An Investigation into the Mechanism of High Selectivity SiOx and SiNx Dielectric Etching
Robert Bruce, H. Miyazoe, N.P. Marchack, IBM Research Division, T.J. Watson Research Center, J. Lee, J.C. Shearer, IBM Research, Albany, NY, JM. Papalia, S.U. Engelmann, E.A. Joseph, IBM Research Division, T.J. Watson Research Center, J.C. Arnold, IBM Research, Albany, NY
2:20pm PS-MoA3
The Impact of Highly Selective Dielectric Etches on Etch Stop Layers
Andre Labonte, GLOBALFOUNDRIES, A. Carr, IBM, J.M. Dechene, GLOBALFOUNDRIES, J.C. Shearer, IBM, J.M. Lucas, B. Messer, A. Metz, Tokyo Electron America
2:40pm PS-MoA4
Plasma Etching of High Aspect Ratio Contacts in SiO2 using Ar/C4F8/O2 Mixtures: A Computational Investigation
Shuo Huang, C.M. Huard, University of Michigan, S. Shim, S. Lee, I.-C. Song, S. Lu, Samsung Electronics Co., Ltd., M.J. Kushner, University of Michigan
3:00pm PS-MoA5 Invited Paper
BEOL & Interconnect Challenges in Memory Scaling
Mark Kiehlbauch, Micron Technology
4:00pm PS-MoA8
Control of Uniformity and Ion Energy Distributions in Tri-frequency Capacitively Coupled Plasmas Accounting for Finite Wavelength Effects
Peng Tian, S. Huang, University of Michigan, S. Shim, S. Lee, I.-C. Song, S. Lu, Samsung Electronics Co., Ltd., M.J. Kushner, University of Michigan
4:20pm PS-MoA9
Metal Etch Mechanisms Using NHx and CN-based Chemistry
Nathan Marchack, IBM Research Division, T.J. Watson Research Center, M. Yamazaki, Q. Yang, N. Joy, TEL Technology Center, America, LLC, S.U. Engelmann, E.A. Joseph, IBM Research Division, T.J. Watson Research Center, A. Ranjan, TEL Technology Center, America, LLC
4:40pm PS-MoA10
The Impact of Gate Overlap on Self-Aligned Contact (SAC) Etching
Jeffrey Shearer, IBM Research Division, Albany, A.P. Labonte, GLOBALFOUNDRIES, J.M. Lucas, A. Metz, Tokyo Electron - TTCA, J.C. Arnold, IBM Research Division, Albany
5:00pm PS-MoA11
Dynamic Plasma Etching of EUV Photoresist for Contact Profile Control and PR Selectivity Improvement
Hongyun Cottle, I. Saraf, A. Metz, P. Biolsi, TEL Technology Center, America, LLC