AVS 63rd International Symposium & Exhibition | |
Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
1:40pm | PS-MoA1 The Search for New Multi-Pattern Etch Colors: Usual (SiO2, SiN, SiC) and Unusual (hi-k, BN, BC:H) Suspects Michelle Paquette, S. Dhungana, B.J. Nordell, A.N. Caruso, University of Missouri-Kansas City, W.A. Lanford, University at Albany, G. Chollon, C. Pallier, F. Teyssandier, Universite de Bordeaux, France, K. Scharfenberger, D. Jacob, S.W. King, Intel Corporation |
2:00pm | PS-MoA2 An Investigation into the Mechanism of High Selectivity SiOx and SiNx Dielectric Etching Robert Bruce, H. Miyazoe, N.P. Marchack, IBM Research Division, T.J. Watson Research Center, J. Lee, J.C. Shearer, IBM Research, Albany, NY, JM. Papalia, S.U. Engelmann, E.A. Joseph, IBM Research Division, T.J. Watson Research Center, J.C. Arnold, IBM Research, Albany, NY |
2:20pm | PS-MoA3 The Impact of Highly Selective Dielectric Etches on Etch Stop Layers Andre Labonte, GLOBALFOUNDRIES, A. Carr, IBM, J.M. Dechene, GLOBALFOUNDRIES, J.C. Shearer, IBM, J.M. Lucas, B. Messer, A. Metz, Tokyo Electron America |
2:40pm | PS-MoA4 Plasma Etching of High Aspect Ratio Contacts in SiO2 using Ar/C4F8/O2 Mixtures: A Computational Investigation Shuo Huang, C.M. Huard, University of Michigan, S. Shim, S. Lee, I.-C. Song, S. Lu, Samsung Electronics Co., Ltd., M.J. Kushner, University of Michigan |
3:00pm | PS-MoA5 Invited Paper BEOL & Interconnect Challenges in Memory Scaling Mark Kiehlbauch, Micron Technology |
4:00pm | PS-MoA8 Control of Uniformity and Ion Energy Distributions in Tri-frequency Capacitively Coupled Plasmas Accounting for Finite Wavelength Effects Peng Tian, S. Huang, University of Michigan, S. Shim, S. Lee, I.-C. Song, S. Lu, Samsung Electronics Co., Ltd., M.J. Kushner, University of Michigan |
4:20pm | PS-MoA9 Metal Etch Mechanisms Using NHx and CN-based Chemistry Nathan Marchack, IBM Research Division, T.J. Watson Research Center, M. Yamazaki, Q. Yang, N. Joy, TEL Technology Center, America, LLC, S.U. Engelmann, E.A. Joseph, IBM Research Division, T.J. Watson Research Center, A. Ranjan, TEL Technology Center, America, LLC |
4:40pm | PS-MoA10 The Impact of Gate Overlap on Self-Aligned Contact (SAC) Etching Jeffrey Shearer, IBM Research Division, Albany, A.P. Labonte, GLOBALFOUNDRIES, J.M. Lucas, A. Metz, Tokyo Electron - TTCA, J.C. Arnold, IBM Research Division, Albany |
5:00pm | PS-MoA11 Dynamic Plasma Etching of EUV Photoresist for Contact Profile Control and PR Selectivity Improvement Hongyun Cottle, I. Saraf, A. Metz, P. Biolsi, TEL Technology Center, America, LLC |