AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Monday Sessions

Session EM+TF+OX+GR-MoA
High-k Dielectrics for MOSFETS II

Monday, October 29, 2012, 2:00 pm, Room 009
Moderators: C.L. Hinkle, University of Texas at Dallas, H.J. Kim, National Institute of Aerospace (NIA)

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Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM+TF+OX+GR-MoA1 Invited Paper
"6.1" Family: The Next Generation of III-V Semiconductors for Advanced CMOS: Epitaxial Growth and Passivation Challenges
C. Merckling, A. Alian, A. Firrincelli, S. Jiang, M. Cantoro, J. Dekoster, M. Caymax, M. Heyns, IMEC, Belgium
2:40pm EM+TF+OX+GR-MoA3
Improving Nucleation and Passivation of Ge(100) via H2O and H2O2 Dosing
T. Kaufman-Osborn, K. Kiantaj, J.S. Lee, A.C. Kummel, University of California San Diego
3:00pm EM+TF+OX+GR-MoA4
Electrical and Physical Characteristics of High-k/Metal Gate MOS Devices on MBE-Grown Germanium on Silicon Using Aspect Ratio Trapping
S.R.M. Anwar, C. Buie, N. Lu, M.J. Kim, C.L. Hinkle, University of Texas at Dallas
3:40pm EM+TF+OX+GR-MoA6
In Situ Infrared Spectroscopy Study on the Temperature Dependence on the Growth Mechanism of Atomic Layer Deposition of Al2O3 on InP(100)
W. Cabrera, The University of Texas at Dallas, I.M. Povey, Tyndall National Institute, Y.J. Chabal, The University of Texas at Dallas
4:00pm EM+TF+OX+GR-MoA7 Invited Paper
Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges
T. Ando, M.M. Frank, E.A. Cartier, B.P. Linder, J. Rozen, IBM T.J. Watson Research Center, K. Choi, GLOBALFOUNDRIES, V. Narayanan, IBM T.J. Watson Research Center
4:40pm EM+TF+OX+GR-MoA9
AR-XPS Study of Al2O3/In-based III-V Interfaces after Annealing under Vacuum at Low Temperature
E. Martinez, H. Grampeix, O. Desplats, CEA, LETI, MINATEC Campus, France, A. Herrera-Gomez, O. Ceballos-Sanchez, CINVESTAV-Unidad Queretaro, Mexico, J. Guerrero, K. Yckache, F. Martin, CEA, LETI, MINATEC Campus, France
5:00pm EM+TF+OX+GR-MoA10
Effect of a H2 Plasma Pre-treatment on the Reduction of Native Oxides at the PEALD Al2O3/InAs Interface
E. Cleveland, L. Ruppalt, J.B. Boos, B. Bennett, J. Champlain, S.M. Prokes, Naval Research Laboratory