| AVS 49th International Symposium | |
| Dielectrics | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI+EL-ThM1 Invited Paper Epitaxial Oxides on Silicon for Alternative Gate Dielectrics and More D.G. Schlom, Penn State University |
| 9:00am | DI+EL-ThM3 Electrical and Material Properties of 10 nm Thick Hf-Doped Tantalum Oxide High k Dielectrics J. Lu, J.Y. Tweg, Y. Kuo, Texas A&M University, P.C. Liu, AMD, B.W. Schueler, Physical Electronics |
| 9:20am | DI+EL-ThM4 The Effect of N@sub 2@ Annealing on Al@sub x@Zr@sub y@O@sub z@ Oxide J. Pétry, O. Richard, W. Vandervorst, T. Conard, IMEC, Belgium, J. Chen, V. Cosnier, International Sematech c/o IMEC, Belgium |
| 9:40am | DI+EL-ThM5 Pulsed Plasma Enhanced MOCVD of High k Y@sub2@O@sub3@ Layers for Gate Dielectric Applications C. Durand, B. Pelissier, C. Vallee, M. Bonvalot, L. Vallier, O. Joubert, CNRS/LTM, France, C. Dubourdieu, CNRS/LMGP, France |
| 10:00am | DI+EL-ThM6 Plasma Enhanced MOCVD of Hafnium Oxide and Hafnium Silicate Thin Films V. Rangarajan, H. Bhandari, T.M. Klein, University of Alabama |
| 10:20am | DI+EL-ThM7 UHV-CVD of Al@sub2@O@sub3@ for Gate Dielectric Applications B.R. Rogers, Z. Song, R.D. Geil, V. Pawar, D.W. Crunkleton, R.A. Weller, Vanderbilt University |
| 10:40am | DI+EL-ThM8 Hafnium Oxide As an Alternative Gate Dielectric in MOSCAP and MOSFET Application Y. Lin, R. Puthenkovilakam, J.P. Chang, University of California, Los Angeles |
| 11:00am | DI+EL-ThM9 Hafnium Silicate and Nitrided Hafnium Silicate as Gate Dielectric Candidates for SiGe-based CMOS Technology S. Addepalli, P. Sivasubramani, H. Zhang, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, University of North Texas |
| 11:20am | DI+EL-ThM10 XPS Study of Chemical Phase Separation in Amorphous Zr Silicate High-k Dielectrics G.B. Rayner, D.H. Kang, G. Lucovsky, North Carolina State University |
| 11:40am | DI+EL-ThM11 Electrical Properties of SiO@sub 2@ Films Grown by Si(100) Reactions with Oxygen, Wet-oxygen and Wet-hydrogen Y. Liu, J. Hebb, Axcelis Technologies, Inc. |