AVS 49th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL-ThM

Paper DI+EL-ThM7
UHV-CVD of Al@sub2@O@sub3@ for Gate Dielectric Applications

Thursday, November 7, 2002, 10:20 am, Room C-107

Session: Issues for Gate Dielectrics
Presenter: B.R. Rogers, Vanderbilt University
Authors: B.R. Rogers, Vanderbilt University
Z. Song, Vanderbilt University
R.D. Geil, Vanderbilt University
V. Pawar, Vanderbilt University
D.W. Crunkleton, Vanderbilt University
R.A. Weller, Vanderbilt University
Correspondent: Click to Email
Successful replacement of silicon dioxide-based MOSFET gate dielectrics by a high-permittivity (high-k) dielectric is a critical step in the continued drive to build the smaller, faster, lower-power, more-integrated circuits that society is demanding. Our goal toward this effort is to develop a thermodynamically and microstructurally stable, amorphous material system, having no interfacial silicon dioxide formation. In this presentation I will briefly discuss the need for an alternative gate dielectric and a "wish list" of characteristics for this material. I will then discuss our work on developing alumina/zirconia alloys as a potential gate dielectric. We have begun this effort by studying the deposition of alumina films in an ultra-high-vacuum chemical vapor deposition (UHV-CVD) system. I will present our findings to date in relation to the CVD process. In addition I will discuss the characterization of these films using spectroscopic ellipsometry and time-of-flight medium energy backscattering (ToF-MEBS), a characterization capability unique to Vanderbilt University.@footnote 1@ @FootnoteText@ @footnote 1@ This work is supported by the National Science Foundation grant # CTS-0092792.