| AVS 47th International Symposium | |
| Semiconductors | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SC+EL+SS-ThM1 Step Structures and Energies on Vicinal Si(001) Monohydride Surfaces: Dependence on H Chemical Potential A. Laracuente, L.J. Whitman, Naval Research Laboratory |
| 8:40am | SC+EL+SS-ThM2 Si(100) Surface Roughening and H Atom Absorption: Surface and Bulk Characterizations. S.K. Jo, J.H. Kang, Kyung Won University, S. Korea, X. Yan, J.M. White, J.G. Ekerdt, University of Texas at Austin, J. Lee, Seoul National University, S. Korea, J.Y. Maeng, S.H. Kim, Korea Advanced Institute of Science and Technology |
| 9:00am | SC+EL+SS-ThM3 Invited Paper Dissociation Pathways of Molecular Hydrogen on Silicon Surfaces@footnote 1@ U. Höfer, Philipps Universität Marburg, Germany |
| 9:40am | SC+EL+SS-ThM5 Hydrogen Bonding on Compound Semiconductor Surfaces R.F. Hicks, Q. Fu, University of California, Los Angeles, L. Li, University of Wisconsin, Milwaukee, C.H. Li, University of California, Los Angeles |
| 10:00am | SC+EL+SS-ThM6 Scanning Tunneling Microscopy of Low Temperature Adsorption H2 on GaAs(001) H. Xu, Y. Lee, J. Lee, A. Lee, National University of Singapore |
| 10:20am | SC+EL+SS-ThM7 Theoretical Approaches for Predicting SiGe Heteroepitaxy C. Mui, S.F. Bent, C.B. Musgrave, Stanford University |
| 10:40am | SC+EL+SS-ThM8 Real-time Monitoring of H@sub 2@ Adsorption on C(001) at High Temperature by Ultraviolet Photoelectron Spectroscopy Y. Takakuwa, M. Asano, Tohoku University, Japan |
| 11:00am | SC+EL+SS-ThM9 Infrared Studies of Hydrogen on Diamond (100) J.N. Russell, Jr., Naval Research Laboratory, J. Hovis, R.J. Hamers, University of Wisconsin, G.T. Wang, S.F. Bent, Stanford University, M.P. D'Evelyn, General Electric CRD, J.E. Butler, Naval Research Laboratory |
| 11:20am | SC+EL+SS-ThM10 Fundamental Connection Between the ESD of H/D at Silicon Surfaces and at Oxide/Silicon Interfaces K. Cheng, J. Lee, Z. Chen, J.-P. Leburton, E. Rosenbaum, K. Hess, J.W. Lyding, University of Illinois, Urbana-Champaign |
| 11:40am | SC+EL+SS-ThM11 Depth-Resolved Determination of the Hydrogen Concentration at Buried SiO@sub 2@/Si(100) Interfaces by Resonant Nuclear Reaction Analysis M. Wilde, M. Matsumoto, K. Fukutani, University of Tokyo, Japan, Z. Liu, Y. Kawashima, NEC Corp., Japan |