AVS 47th International Symposium
    Semiconductors Thursday Sessions
       Session SC+EL+SS-ThM

Paper SC+EL+SS-ThM2
Si(100) Surface Roughening and H Atom Absorption: Surface and Bulk Characterizations.

Thursday, October 5, 2000, 8:40 am, Room 306

Session: Hydrogen On and In Semiconductors
Presenter: S.K. Jo, Kyung Won University, S. Korea
Authors: S.K. Jo, Kyung Won University, S. Korea
J.H. Kang, Kyung Won University, S. Korea
X. Yan, University of Texas at Austin
J.M. White, University of Texas at Austin
J.G. Ekerdt, University of Texas at Austin
J. Lee, Seoul National University, S. Korea
J.Y. Maeng, Korea Advanced Institute of Science and Technology
S.H. Kim, Korea Advanced Institute of Science and Technology
Correspondent: Click to Email
Absorption of thermal-energy gaseous hydrogen atoms by Si(100), exceeding by far the dopant and other impurity concentrations, occurs within a narrow substrate temperature (T@sub s@) window centered at ~ 460 K. The absorbed hydrogen persists in the crystalline bulk as highly mobile species before migrating out and desorbing as molecular hydrogen at T@sub s@ as high as 900 K, well above the recombinative desorption temperatures of surface-adsorbed H. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the T@sub s@ window. In support of these conclusions are our TPD, Raman, SIMS, TEM, and STM data for this fundamental and interesting phenomenon of thermal H atom absorption by Si(100).