AVS 47th International Symposium
    Semiconductors Thursday Sessions
       Session SC+EL+SS-ThM

Paper SC+EL+SS-ThM5
Hydrogen Bonding on Compound Semiconductor Surfaces

Thursday, October 5, 2000, 9:40 am, Room 306

Session: Hydrogen On and In Semiconductors
Presenter: R.F. Hicks, University of California, Los Angeles
Authors: R.F. Hicks, University of California, Los Angeles
Q. Fu, University of California, Los Angeles
L. Li, University of Wisconsin, Milwaukee
C.H. Li, University of California, Los Angeles
Correspondent: Click to Email
Hydrogen adsorption on gallium arsenide and indium phosphide (001) surfaces has been studied by scanning-tunneling microscopy and internal-reflection infrared spectroscopy combined with ab initio molecular cluster calculations. The calculations are based on a series of clusters that accurately simulate the group III and V dimer termination of the surface. Good agreement has been achieved between the vibrational frequencies predicted by the theory and those observed in the experiments. On the anion-rich surfaces, hydrogen adsorbs on arsenic (or phosphorous) dimers to form isolated and coupled monohydrogen bonds and dihydrogen bonds. Conversely, on the cation-rich surface, hydrogen adsorbs on gallium (or indium) dimers to form terminal and bridged metal hydrides. The latter species occur in isolated or coupled structures involving two or three metal atoms. The implications of these results for the surface science of compound semiconductors will be discussed at the meeting.