AVS 47th International Symposium
    Semiconductors Thursday Sessions
       Session SC+EL+SS-ThM

Paper SC+EL+SS-ThM6
Scanning Tunneling Microscopy of Low Temperature Adsorption H2 on GaAs(001)

Thursday, October 5, 2000, 10:00 am, Room 306

Session: Hydrogen On and In Semiconductors
Presenter: H. Xu, National University of Singapore
Authors: H. Xu, National University of Singapore
Y. Lee, National University of Singapore
J. Lee, National University of Singapore
A. Lee, National University of Singapore
Correspondent: Click to Email
The variable temperature scanning tunneling microscope (VT-STM) has been used to study in-situ the transition of 2x6 reconstruction of GaAs (001) at low temperature. High resolution STM images show that the metastable As dimers rows of 2x6 reconstruction in GaAs (001) becomes unstable under the attack of the dissociated adsorption H@sub2@. As dimers were broken firstly due to the formation of double atom lines structure by the attacking of hydrogen on As dimers atoms. Furthermore, the opened As atoms rows on the top of this surface were twisted gradually up to coalesce together with a width of 3 As dimers. Unexpectedly, these compressed As atoms suddenly extend along the original As dimers rows direction(-110) gives rise to form a metastable trimer As rows.