| AVS 47th International Symposium | |
| Dielectrics | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI+EL+MS-WeM1 Invited Paper Ultra Low k Mesoporous Silica Dielectrics for Semiconductor Interconnects S. Baskaran, J. Liu, X. Li, C. Coyle, J. Birnbaum, G.C. Dunham, G.E. Fryxell, Pacific Northwest National Laboratory, C. Jin, International SEMATECH |
| 9:00am | DI+EL+MS-WeM3 Deposition of Thermal Stable Amorphous Carbon Nitride Thin Films with Low Dielectric Constant by ECR-CVD X.W. Liu, J.H. Lin, H.C. Shih, National Tsing Hua University, Taiwan, ROC |
| 9:20am | DI+EL+MS-WeM4 Impact of Hydrogen Addition on the Deposition Rate of SiOF Films Prepared by High Density Plasma CVD Y.W. Teh, Nanyang Technological University, Singapore, T.C. Ang, Chartered Semiconductor Manufacturing, Singapore, K.S. Wong, Nanyang Technological University, Singapore, K.H. See, S.Y. Loong, Y.C. Wong, Chartered Semiconductor Manufacturing, Singapore |
| 9:40am | DI+EL+MS-WeM5 Solid-state Nuclear Magnetic Resonance of Low Dielectric Constant Si:O:C:H Films P.-Y. Mabboux, K.K. Gleason, Massachusetts Institute of Technology |
| 10:00am | DI+EL+MS-WeM6 A New Simple and Accurate Method to Measure Intra-Metal Capacitance of Low-K Fluorinated Silicon Dioxide K.S. Wong, Y.W. Teh, Nanyang Technological University, Singapore, T.C. Ang, S.Y. Loong, W.B. Loh, Y.C. Wong, Chartered Semiconductor Manufacturing, Singapore |
| 10:20am | DI+EL+MS-WeM7 DC and RF Characteristics of Advanced MIM Capacitors for MMIC's Using Thin and Low Temperature PECVD Si@sub 3@N@sub 4@ Dielectric Layers C.R. LIM, J.H. LEE, S.W. Paek, K.W. Chung, LG-ELITE, Republic of Korea |
| 10:40am | DI+EL+MS-WeM8 Rapid Prototyping by Local Deposition of Siliconoxide and Tungsten Nanostructures for Interconnect Rewiring H.D. Wanzenboeck, S. Harasek, H. Langfischer, A. Lugstein, E. Bertagnolli, Vienna University of Technology, Austria |