AVS 47th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL+MS-WeM

Paper DI+EL+MS-WeM3
Deposition of Thermal Stable Amorphous Carbon Nitride Thin Films with Low Dielectric Constant by ECR-CVD

Wednesday, October 4, 2000, 9:00 am, Room 312

Session: Low K Dielectrics
Presenter: H.C. Shih, National Tsing Hua University, Taiwan, ROC
Authors: X.W. Liu, National Tsing Hua University, Taiwan, ROC
J.H. Lin, National Tsing Hua University, Taiwan, ROC
H.C. Shih, National Tsing Hua University, Taiwan, ROC
Correspondent: Click to Email
Amorphous carbon nitride thin films with low dielectric constants and high thermal stability were synthesized on silicon by using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system in which a rf bias was applied to the silicon substrate and a mixture of C@sub 2@H@sub 2@, N@sub 2@ and Ar was used as precursors. The dielectric constants of our amorphous carbon nitride thin films were found as low as 2.4 at 1 MHz. The thermal stability of the films has been improved by the incorporation of nitrogen to the carbon film. The basic structure, composition and electronic properties of these films were analyzed by Fourier transformation infrared (FTIR) spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and field emission scanning electron microscopy (FE-SEM) and dielectric constant measurements.