AVS 47th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL+MS-WeM

Paper DI+EL+MS-WeM5
Solid-state Nuclear Magnetic Resonance of Low Dielectric Constant Si:O:C:H Films

Wednesday, October 4, 2000, 9:40 am, Room 312

Session: Low K Dielectrics
Presenter: P.-Y. Mabboux, Massachusetts Institute of Technology
Authors: P.-Y. Mabboux, Massachusetts Institute of Technology
K.K. Gleason, Massachusetts Institute of Technology
Correspondent: Click to Email
Adding organic content to SiO@sub 2@ is an evolutionary pathway to low dielectric films with k @<=@ 3.0. Alternate names for these materials include carbon-doped oxides, organosilicate glasses (OSG), and Si:O:C:H films. Both spin-coating and chemical vapor deposition (CVD) processes have been developed for this class of low-k films. Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) have only a limited ability to distinguish variations in Si:O:C:H film chemistry. In this work, solid-state nuclear magnetic resonance (NMR) is shown to have sufficient sensitivity to determine the network structure of low dielectric constant Si:O:C:H films. Characterization of Si:O:C:H films by @super 1@H, @super 13@C, and @super 29@Si magic-angle spinning NMR will be demonstrated. Because of its wide range of chemical shifts, @super 29@Si NMR is particularly useful to elucidate new details regarding the composition and structure of these low dielectric constant films. Up to ten different environments can be resolved in some of the films. Many of the observed chemical bonding configurations have been previously observed in bulk organosilicate glasses. The NMR results can be expressed in terms of a connectivity number, which is simply the average number of bonds between network forming atoms. The connectivity number may provide a means to correlate with the mechanical properties. Fundamental understanding of structure-property-processing relationships will facilitate the engineering of the molecular architecture required for successful integration of Si:O:C:H dielectric films.