AVS 47th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL+MS-WeM

Paper DI+EL+MS-WeM7
DC and RF Characteristics of Advanced MIM Capacitors for MMIC's Using Thin and Low Temperature PECVD Si@sub 3@N@sub 4@ Dielectric Layers

Wednesday, October 4, 2000, 10:20 am, Room 312

Session: Low K Dielectrics
Presenter: C.R. LIM, LG-ELITE, Republic of Korea
Authors: C.R. LIM, LG-ELITE, Republic of Korea
J.H. LEE, LG-ELITE, Republic of Korea
S.W. Paek, LG-ELITE, Republic of Korea
K.W. Chung, LG-ELITE, Republic of Korea
Correspondent: Click to Email
In this work, we show the excellent DC and RF characteristics of MIM (metal-insulator-metal) of PECVD Si@sub 3@N@sub 4@ thin film deposited at 85°C. The breakdown field strength of MIM capacitors with 490 Å Si@sub 3@N@sub 4@ was larger than 4.1 MV/cm which indicates the excellent quality of the deposited Si@sub 3@N@sub 4@ film. The main capacitance of unit area extracted by RF (radio frequency) measurements was 1240 pF/mm@super2@. So, its high capacitance enables us to reduce the size of MIM to a quarter size compared with the conventional MIM having 2000 Å Si@sub 3@N@sub 4@. In spite of its thin thickness of dielectrics, RF characteristics showed good performance. Above all, it was fabricated at low temperature, so we were able to develop the process of MIM fabrication using dielectric lift-off. At this point, the thickness adapted in dielectric lift-off process was about 1000 Å for adjusting capacitance to a designed capacitance.