AVS 47th International Symposium | |
Dielectrics | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | DI+EL+MS-WeA1 Invited Paper Materials Considerations for High-K Gate Dielectrics for Scaled CMOS G.D. Wilk, Lucent Technologies, R.M. Wallace, University of North Texas |
2:40pm | DI+EL+MS-WeA3 New High k Thin Films with Improved Physical and Electrical Properties Y. Kuo, J. Donnelly, J. Tewg, Texas A&M University |
3:00pm | DI+EL+MS-WeA4 Chemical and Microstructural Separation of Homogeneous Plasma Deposited (ZrO@sub2@)@subx@(SiO@sub2@)@sub(1-x)@ films (x @<=@ 0.5) into SiO@sub2@ and ZrO@sub2@ Phases after Rapid Thermal Annealing in Ar at 900°C B. Rayner, R. Therrien, G. Lucovsky, North Carolina State University |
3:20pm | DI+EL+MS-WeA5 A Study of ZrO@sub2@ and Zr-silicate Thin Film for Gate Oxide Applications S.-W. Nam, Yonsei University & Samsung Electronics Co., Korea, J.-H. Yoo, H.-Y. Kim, D.-H. Ko, Yonsei University, Korea, S.-H. Oh, C.-G. Park, Pohang University of Science and Technology (POSTECH), Korea, H.-J. Lee, Stanford University |
3:40pm | DI+EL+MS-WeA6 Ultra-thin Zirconium Oxide Films Deposited by Rapid Thermal CVD for MOSFET Applications Y. Lin, J.P. Chang, University of California, Los Angeles |
4:00pm | DI+EL+MS-WeA7 High-quality Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Prepared by Plasma Enhanced Chemical Vapor Deposition Employing NH@sub 3@ and SiF@sub 4@ H. Ohta, M. Hori, T. Goto, Nagoya University, Japan |
4:20pm | DI+EL+MS-WeA8 Elimination of Carbon Impurities in the Metalorganic Chemical Vapor Deposition (MOCVD) of Titanium Dioxide on Silicon M. Yoon, A.C. Tuan, V.K. Medvedev, University of Washington, J.W. Rogers, Jr., Pacific Northwest National Laboratory |
4:40pm | DI+EL+MS-WeA9 Microscopic Understanding of the Interface for the Heteroepitaxy of Crystalline Oxides on Silicon S. Gan, D.E. McCready, D.J. Gaspar, Y. Liang, Pacific Northwest National Laboratory |
5:00pm | DI+EL+MS-WeA10 Formation of Ultrathin Yttrium Silicate by Thermal Oxidation of Yttrium on Silicon M.J. Kelly, J.J. Chambers, D. Niu, G.N. Parsons, North Carolina State University |