AVS 47th International Symposium
    Dielectrics Wednesday Sessions

Session DI+EL+MS-WeA
Alternate Gate Dielectrics

Wednesday, October 4, 2000, 2:00 pm, Room 312
Moderator: R. Ramesh, University of Maryland


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm DI+EL+MS-WeA1 Invited Paper
Materials Considerations for High-K Gate Dielectrics for Scaled CMOS
G.D. Wilk, Lucent Technologies, R.M. Wallace, University of North Texas
2:40pm DI+EL+MS-WeA3
New High k Thin Films with Improved Physical and Electrical Properties
Y. Kuo, J. Donnelly, J. Tewg, Texas A&M University
3:00pm DI+EL+MS-WeA4
Chemical and Microstructural Separation of Homogeneous Plasma Deposited (ZrO@sub2@)@subx@(SiO@sub2@)@sub(1-x)@ films (x @<=@ 0.5) into SiO@sub2@ and ZrO@sub2@ Phases after Rapid Thermal Annealing in Ar at 900°C
B. Rayner, R. Therrien, G. Lucovsky, North Carolina State University
3:20pm DI+EL+MS-WeA5
A Study of ZrO@sub2@ and Zr-silicate Thin Film for Gate Oxide Applications
S.-W. Nam, Yonsei University & Samsung Electronics Co., Korea, J.-H. Yoo, H.-Y. Kim, D.-H. Ko, Yonsei University, Korea, S.-H. Oh, C.-G. Park, Pohang University of Science and Technology (POSTECH), Korea, H.-J. Lee, Stanford University
3:40pm DI+EL+MS-WeA6
Ultra-thin Zirconium Oxide Films Deposited by Rapid Thermal CVD for MOSFET Applications
Y. Lin, J.P. Chang, University of California, Los Angeles
4:00pm DI+EL+MS-WeA7
High-quality Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Prepared by Plasma Enhanced Chemical Vapor Deposition Employing NH@sub 3@ and SiF@sub 4@
H. Ohta, M. Hori, T. Goto, Nagoya University, Japan
4:20pm DI+EL+MS-WeA8
Elimination of Carbon Impurities in the Metalorganic Chemical Vapor Deposition (MOCVD) of Titanium Dioxide on Silicon
M. Yoon, A.C. Tuan, V.K. Medvedev, University of Washington, J.W. Rogers, Jr., Pacific Northwest National Laboratory
4:40pm DI+EL+MS-WeA9
Microscopic Understanding of the Interface for the Heteroepitaxy of Crystalline Oxides on Silicon
S. Gan, D.E. McCready, D.J. Gaspar, Y. Liang, Pacific Northwest National Laboratory
5:00pm DI+EL+MS-WeA10
Formation of Ultrathin Yttrium Silicate by Thermal Oxidation of Yttrium on Silicon
M.J. Kelly, J.J. Chambers, D. Niu, G.N. Parsons, North Carolina State University