AVS 47th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL+MS-WeA

Paper DI+EL+MS-WeA8
Elimination of Carbon Impurities in the Metalorganic Chemical Vapor Deposition (MOCVD) of Titanium Dioxide on Silicon

Wednesday, October 4, 2000, 4:20 pm, Room 312

Session: Alternate Gate Dielectrics
Presenter: M. Yoon, University of Washington
Authors: M. Yoon, University of Washington
A.C. Tuan, University of Washington
V.K. Medvedev, University of Washington
J.W. Rogers, Jr., Pacific Northwest National Laboratory
Correspondent: Click to Email
A novel process has been developed for the deposition of titanium dioxide thin films on p-type Si(100) with high quality interfacial characteristics and the absence of carbon. Elimination of carbon contaminants in the titanium dioxide film and at the interface between the oxide and silicon is important because the presence of impurities can severely degrade the electrical properties of the device. This novel process consists of three stages of deposition in an ultra-high vacuum chamber. Initially, a continuous titanium layer is deposited on silicon using a titanium sublimator. This titanium layer is then oxidized using a gas phase oxygen source to form a TiO@sub x@ buffer layer. Subsequently, a titanium dioxide thin film is deposited by MOCVD using titanium tetrakis-isopropoxide (TTIP) at low temperature (below 650K). Auger electron spectroscopy (AES) analysis at each stage of growth shows no evidence of carbon contamination either within the titanium dioxide layer or at the TiO@sub 2@/Si interface. Additional AES measurements suggest that the titanium layer grows on silicon according to the Stranski-Krastanov mode, which permits uniform growth. A carbon-free titanium dioxide thin film was successfully deposited on silicon using this novel process.