AVS 47th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL+MS-WeA

Paper DI+EL+MS-WeA5
A Study of ZrO@sub2@ and Zr-silicate Thin Film for Gate Oxide Applications

Wednesday, October 4, 2000, 3:20 pm, Room 312

Session: Alternate Gate Dielectrics
Presenter: S.-W. Nam, Yonsei University & Samsung Electronics Co., Korea
Authors: S.-W. Nam, Yonsei University & Samsung Electronics Co., Korea
J.-H. Yoo, Yonsei University, Korea
H.-Y. Kim, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
S.-H. Oh, Pohang University of Science and Technology (POSTECH), Korea
C.-G. Park, Pohang University of Science and Technology (POSTECH), Korea
H.-J. Lee, Stanford University
Correspondent: Click to Email
We investigated the microstructures and electrical properties of ZrO@sub2@ and Zr-silicate thin films deposited by reactive DC magnetron sputtering on Si substrate for gate dielectric application. The films deposited on Si with various deposition conditions and annealing treatments were analyzed by spectroscopic elipsometry, XRD, AFM and XPS. The refractive index of the ZrO@sub2@ thin films increased upon annealing. The ZrO@sub2@ film deposited at low temperature and low power showed amorphous structure, which the films deposited at high temperature and high power showed crystalline structures. The growth of the interfacial oxide between ZrO@sub2@(or Zr-silicate) and Si substrate was observed by cross sectional HR-TEM. C-V and I-V measurements of the MOSCAP structures showed that the accumulation capacitance value and the leakage current level decreased upon annealing in O@sub2@ gas ambient, which is explained by the formation of the interfacial SiO@sub2@ layer.