| AVS 46th International Symposium | |
| Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-MoM1 Mechanisms and Dependencies of Gate Oxide Degradation Due to Electron Shading G.S. Hwang, K.P. Giapis, California Institute of Technology |
| 8:40am | PS-MoM2 Calculation and Measurement of Ion and Electron Shading Parameters and Comparison with Computer Simulation S.C. Siu, R. Patrick, V. Vahedi, Lam Research Corporation |
| 9:00am | PS-MoM3 Direct Experimental Determination and Modeling of VUV induced Dielectric Conduction during Plasma Processing M.V. Joshi, J.P. McVittie, K.C. Saraswat, Stanford University |
| 9:20am | PS-MoM4 Investigating Ion Density and Electron Temperature Effects on Plasma Damage during Pulsed and Continuous Wave Metal Etching K.H.A. Bogart, Lucent Technologies, J.I. Colonell, Praelux, M.V. Malyshev, V.M. Donnelly, J.T.C. Lee, Lucent Technologies |
| 9:40am | PS-MoM5 Invited Paper Sources of Plasma Induced Damage in Back-End VLSI Processing S.W. Downey, D.W. Hwang, N. Layadi, P.W. Mason, A. Yen, V.M. Donnelly, M.V. Malyshev, Lucent Technologies, Bell Laboratories, J.I. Colonell, Praelux, Inc. |
| 10:20am | PS-MoM7 Charge Density Measurements in a Metal Etch Strip/Passivation Chamber R.L. Jarecki, M.G. Blain, Sandia National Laboratories, J.S. Papanu, Applied Materials, Inc. |
| 10:40am | PS-MoM8 Evaluation of Tests to Examine Charging Damage in Ion Implantation and Plasma Processes M.J. Goeckner, Varian Semiconductor Equipment Associates, J. Erhardt, AMD Inc., S.B. Felch, Varian Semiconductor Equipment Associates, K. Ahmed, AMD Inc. |
| 11:00am | PS-MoM9 Study of Synchrotron Radiation-Induced Surface-Conductivity of SiO@sub 2@ for Plasma Charging Applications C. Cismaru, J.L. Shohet, University of Wisconsin, Madison, J.P. McVittie, Stanford University |
| 11:20am | PS-MoM10 Effect of Surface Oxide Loss on Surface Potential Measurement (SPM) Accuracy for Plasma Charging Damage Characterization S. Ma, K. Nauka, R. Kavari, Hewlett-Packard Company |