AVS 46th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoM

Paper PS-MoM2
Calculation and Measurement of Ion and Electron Shading Parameters and Comparison with Computer Simulation

Monday, October 25, 1999, 8:40 am, Room 609

Session: Plasma Damage
Presenter: S.C. Siu, Lam Research Corporation
Authors: S.C. Siu, Lam Research Corporation
R. Patrick, Lam Research Corporation
V. Vahedi, Lam Research Corporation
Correspondent: Click to Email
Electron shading is recognized as a major mechanism for plasma process induced damage in commercial plasma etch chambers. As the semiconductor industry moves to smaller feature sizes and thinner gate oxides, shading induced damage becomes a greater concern. The shading effect is known to be more severe with higher aspect ratio features and high density plasmas. Recently, V. Vahedi, et al, derived an analytic model@footnote 1@ capturing the main parameters involved in electron shading. Two of these parameters, the ion and electron shading coefficients k@sub i@ and k@sub e@, have not been measured to date, but are crucial to the model. This study uses patterned and unpatterned SPORT@footnote 2@ wafers to measure and derive these shading parameters. In addition, a PIC simulation was used to predict values for these shading parameters. The simulation is able to account for charged resist structures that cause electron shading. Comparisons were made between the simulation and the experimental results. @FootnoteText@ @footnote 1@V. Vahedi, et al, "Topographic Dependence of Plasma Charging Induced Device Damage." 2nd International Symposium on Plasma Process-Induced Damage, May 13-14, 1997, Monterey California. @footnote 2@S. Ma and J.P. McVittie, Proceedings of the Symposium on Process Control, Diagnostics and Modeling in Semiconductor Manufacturing I, 95-4, pg 401, (1995).