| AVS 45th International Symposium | |
| Plasma Science and Technology Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-WeM1 Invited Paper Gate Oxide Damage: Testing Approaches and Methodologies C.T. Gabriel, VLSI Technology, Inc. |
| 9:00am | PS-WeM3 Evaluation of Charging Damage Test Structures for Ion Implantation Processes M.J. Goeckner, S.B. Felch, J. Weeman, S. Mehta, Varian Associates, J.S. Reedholm, Reedholm |
| 9:20am | PS-WeM4 SPORT Measured Electron Shading Effects and Comparison with Computer Simulation S.C. Siu, R. Patrick, V. Vahedi, Lam Research Corporation |
| 9:40am | PS-WeM5 Suppression of Charging Damage Caused by Electron Shading Effect in Gate Etching Technology K. Yoshida, K. Tokashiki, H. Miyamoto, NEC Corporation, Japan |
| 10:00am | PS-WeM6 Modeling of Charging Damage during Dielectric Deposition in High-Density Plasmas G.S. Hwang, K.P. Giapis, California Institute of Technology |
| 10:20am | PS-WeM7 Silicon Oxidation Employing Negative Ion under Transformer Coupled RF Bias H. Shindo, T. Fujii, T. Koromogawa, Tokai University, Japan, Y. Horiike, Toyo University, Japan |
| 10:40am | PS-WeM8 Direct Measurement of VUV Caused Oxide Conduction during Plasma Charging J.P. McVittie, Stanford University |
| 11:00am | PS-WeM9 Vacuum Ultraviolet Spectra of Metal-Etch Plasma Processing Discharges J.R. Woodworth, M.G. Blain, R.L. Jarecki, T.W. Hamilton, B.P. Aragon, Sandia National Laboratories |
| 11:20am | PS-WeM10 Spatial Characterization of Plasma VUV Emission in an ECR Etcher C. Cismaru, J.L. Shohet, University of Wisconsin, Madison |