| AVS 45th International Symposium | |
| Applied Surface Science Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | AS+VT-FrM1 Invited Paper An Overview of the Applications of Surface Analysis Techniques in Semiconductor Technology B.R. Rogers, R. Gregory, G. Harris, D. Werho, W. Chen, Motorola, Inc. |
| 9:00am | AS+VT-FrM3 An Evaluation of SIMS Analytical Capabilities For Sub-0.25 Micron Implant Technology V.K.F. Chia, Charles Evans & Associates |
| 9:20am | AS+VT-FrM4 Accurate Dynamic Secondary Ion Mass Spectrometry (SIMS) and Auger Electron Spectroscopy (AES) Characterization of SiGe Stoichiometry and Hetero-Junction Bipolar Transistor (HBT) Dopant Levels T.H. Büyüklimanli, J.T. Mayer, M.S. Denker, R.L. Moore, C.W. Magee, Evans East |
| 9:40am | AS+VT-FrM5 A Comparison Auger and TOF-SIMS Depth Profiling of Silicon Oxide Nitride Multilayers Using Low Incident Ion Energy S.E. Molis, R.E. Davis, IBM Corporation, East Fishkill Facility, D.W. Kisker, IBM Research Division, D. Paul, Physical Electronics |
| 10:00am | AS+VT-FrM6 A New High Performance TOF-SIMS Instrument for 300 mm Wafer Inspection E. Niehuis, C. Bendel, D. Rading, ION-TOF GmbH, Germany |
| 10:20am | AS+VT-FrM7 Automated Process Monitoring Using ESCA and Numerical Methods D.J. Hook, J.F. Moulder, J.S. Hammond, Physical Electronics, Inc. |
| 10:40am | AS+VT-FrM8 Measurement of Carrier Concentration and Lattice Absorption in Bulk and Epitaxial Silicon Carbide Using Infrared Ellipsometry T.E. Tiwald, University of Nebraska, Lincoln, S. Zollner, Motorola Semiconductor Products Sector, J.A. Woollam, University of Nebraska, Lincoln, J. Christiansen, Motorola Semiconductor Products Sector, P.G. Snyder, University of Nebraska, Lincoln |
| 11:00am | AS+VT-FrM9 Si Dopant Site Within Ion Implanted GaN Lattice H. Kobayashi, W.M. Gibson, State University of New York, Albany |
| 11:20am | AS+VT-FrM10 Laser Assisted Etching of InP Studied with XPS D.M. Wieliczka, J.M. Wrobel, C.E. Moffitt, University of Missouri, Kansas City, J.J. Dubowski, National Research Council of Canada |