AVS 45th International Symposium
    Applied Surface Science Division Friday Sessions
       Session AS+VT-FrM

Paper AS+VT-FrM9
Si Dopant Site Within Ion Implanted GaN Lattice

Friday, November 6, 1998, 11:00 am, Room 307

Session: Application of Surface Analysis Techniques to Semiconductor Technology
Presenter: H. Kobayashi, State University of New York, Albany
Authors: H. Kobayashi, State University of New York, Albany
W.M. Gibson, State University of New York, Albany
Correspondent: Click to Email
There has been considerable interest in GaN for the fabrication of blue light emitting devices. In addition, this material is attractive for use in high temperature or high power electronic devices. Therefore, ion implantation for selective area doping is becoming more important for future Ga N device technology. It has been demonstrated that Si and Mg ion implantation and post-implant annealing are useful to obtain n-type and p-type GaN, respectively. However, there is still little information on actual lattice lo cation of impurities. We have investigated the Si dopant site in the GaN la ttice using ion channeling technique in combination with Rutherford backscattering spectrometry (RBS), particle induced X-ray emission (PIXE) and nuclear reaction analysis (NRA). Metalorganic chemical vapor deposition (MOCVD) grown GaN on a c-plane sapphire substrate implanted with @super 28@Si at a do se of 7x10@super 14@cm@super -2@ with post-implant annealing was investigated. Channeling measurements were performed by taking angular scans around the <0001> and <10-11> axes and recording RBS, PIXE and NRA yields for Ga, Si and N, respectively. The channeling results indicate that almost 100 % of Si goes into the Ga site when the samples are annealed at 1100°C for 30 minutes while for annealing at 1050°C and below, Si is distributed almost randomly. This suggests that a drastic change of Si substitutionality takes place in a narrow temperature region near 1100°C. Our results directly indicate that the electrical activation of Si implanted GaN with post-implant annealing is due to the formation of substitutional Si at this temperature.