AVS 45th International Symposium
    Applied Surface Science Division Friday Sessions
       Session AS+VT-FrM

Paper AS+VT-FrM4
Accurate Dynamic Secondary Ion Mass Spectrometry (SIMS) and Auger Electron Spectroscopy (AES) Characterization of SiGe Stoichiometry and Hetero-Junction Bipolar Transistor (HBT) Dopant Levels

Friday, November 6, 1998, 9:20 am, Room 307

Session: Application of Surface Analysis Techniques to Semiconductor Technology
Presenter: T.H. Büyüklimanli, Evans East
Authors: T.H. Büyüklimanli, Evans East
J.T. Mayer, Evans East
M.S. Denker, Evans East
R.L. Moore, Evans East
C.W. Magee, Evans East
Correspondent: Click to Email
The recent growth of the consumer microwave electronics market has spurred the development of SiGe HBTs. There are several physical and chemical properties of the device that affect performance and most importantly bandwidth. This has prompted us to take a fresh look at the acquisition and quantification of the SIMS and AES data. This paper investigates the characterization of two parameters of device fabrication: first the stoichiometry of the Ge-doped base layer, second the dopant (typically B) and impurity (typically O) concentration and distribution in the base layer. SIMS and AES were used to characterize a sample set ranging from 5-45 atomic percent Ge. Each sample was ion implanted with B, P, C and O. Differences in sputter rates, recommended analytical protocols (SIMS), data post-processing and changes in relative sensitivity factors will be addressed.