AVS 45th International Symposium
    Applied Surface Science Division Friday Sessions
       Session AS+VT-FrM

Paper AS+VT-FrM3
An Evaluation of SIMS Analytical Capabilities For Sub-0.25 Micron Implant Technology

Friday, November 6, 1998, 9:00 am, Room 307

Session: Application of Surface Analysis Techniques to Semiconductor Technology
Presenter: V.K.F. Chia, Charles Evans & Associates
Correspondent: Click to Email
The applications of SIMS (secondary ion mass spectrometry) to the microelectronics industry are very diverse. In the ion implantation sector SIMS is perhaps the most widely used analytical technique. This is not too surprising because SIMS can detect all elements, produce high precision profiles, and provide elemental surface and bulk information with excellent detection sensitivity. As the design rule continues to shrink the question that arises is, "Can SIMS still be a valuable tool?". This paper addresses this question and reviews advances made in protocol development. For example, SIMS can perform high precision implant characterization (HPIC) to match the dose delivered by two different implanters to within <1% (67% confidence interval) during process replication or transfer, and for initial implanter qualification during fab start-ups. A better understanding of near-surface profiling phenomena has led to more accurate depth profiling of ultra-low energy ion implants (e.g. <1 keV B). SurfaceSIMS was developed to monitor and accurately quantify unintentional contamination that occurs during ion implantation, for example dopant cross-contamination in multi-purpose implanters, and to monitor inadvertent contamination related to sputter erosion or outgassing of implanter construction materials. As device dimensions shrink in size the need to perform ion implant characterization in small areas with high sensitivity becomes increasingly important. One solution is to interleave reactive primary ion species with high current density probes. This procedure enables 12 µm x 12 µm areas to be depth profiled with a sensitivity similar to analyzing a 180 µm x 180 µm area using Cs primary ions alone. In view of these advancements, SIMS appears to be well positioned to continue its primary role in ion implant characterization beyond the year 2000.