AVS 45th International Symposium
    Applied Surface Science Division Friday Sessions
       Session AS+VT-FrM

Invited Paper AS+VT-FrM1
An Overview of the Applications of Surface Analysis Techniques in Semiconductor Technology

Friday, November 6, 1998, 8:20 am, Room 307

Session: Application of Surface Analysis Techniques to Semiconductor Technology
Presenter: B.R. Rogers, Motorola, Inc.
Authors: B.R. Rogers, Motorola, Inc.
R. Gregory, Motorola, Inc.
G. Harris, Motorola, Inc.
D. Werho, Motorola, Inc.
W. Chen, Motorola, Inc.
Correspondent: Click to Email
Over the years the role of surfaces and interfaces has become increasingly important in determining the performance of semiconductor based microelectronic circuits. Consequently, the use of both new and traditional surface analysis techniques in the development of materials and processes as well as in manufacturing metrology and trouble shooting has become more and more popular. This presentation will review the strengths and weaknesses of the more common surface analysis techniques, such as Auger electron spectroscopy, Rutherford backscattering spectrometry, secondary ion mass spectrometry, total reflection x-ray fluorescence, and atomic force microscopy. Some of the newer scanning probe based techniques, such as scanning thermal microscopy and scanning capacitance microscopy, will be introduced. Several application examples will be presented to highlight the strengths and complimentary nature of these techniques. These examples will include: analysis of barrier metal composition as a function of depth into device features, two dimensional dopant profiling, measurement of ion implantation damage in SiC, analysis of fluorinated silicon dioxide film stability, development of wafer cleaning techniques, and the optimization of chemical mechanical polishing processes.