AVS 64th International Symposium & Exhibition
    Plasma Science and Technology Division Tuesday Sessions

Session PS-TuM
Advanced FEOL/Gate Etching

Tuesday, October 31, 2017, 8:00 am, Room 23
Moderators: Kazunori Koga, Kyushu University, Japan, Erwine Pargon, CNRS-LTM, Université Grenoble Alpes, France


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS-TuM1
Highly Selective Silicon Dry Chemical Etch Technique for 7nm FinFET Technology and Beyond
Z. Bi, Thamarai Devarajan, L. Young, B. Miao, S. Devries, N. Loubet, C. Yeung, J. Zhang, A. Greene, H. Zhou, M. Wang, J. Strane, IBM Semiconductor Technology Research, Y. Yao, IBM, D. Canaperi, C. Surisetty, IBM Semiconductor Technology Research
8:20am PS-TuM2
Anisotropic and Selective Isotropic Etching of Si / SiGe Multilayers in Surface Wave Plasmas
Nick Joy, S.A. Voronin, P. Biolsi, TEL Technology Center, America, LLC, A. Ranjan, Tokyo Electron Miyagi Limited, Japan
8:40am PS-TuM3
Control of Anisotropic Simultaneous SiGe-Si Etching for Dual Channel Fin Applications
Yohei Ishii, M. Walker, R. Scott-McCabe, A. Yu, Hitachi High Technologies America, Inc., K. Okuma, Hitachi High-Technologies Corp., Japan, K. Maeda, J. Sebastian, J. Manos, Hitachi High Technologies America, Inc.
9:00am PS-TuM4
Etch Rate and Profile Tailoring of Si and SiO2 through Laser-Stimulated Thermal Desorption
Jason Peck, D.N. Ruzic, University of Illinois at Urbana-Champaign
9:20am PS-TuM5 Invited Paper
Prediction and Control of Fluctuation of Etching Properties by Simulation Technology
Nobuyuki Kuboi, M. Fukasawa, T. Tatsumi, Sony Semiconductor Solutions Corporation, Japan
11:20am PS-TuM11
Underlayer Impact on Line Width Roughness in Extreme Ultraviolet Lithography and Etch
Indira Seshadri, A. DeSilva, Y. Mignot, W. Xu, L. Meli, J. Guo, S. Sieg, J.C. Arnold, N. Felix, IBM Research Division
11:40am PS-TuM12 Invited Paper
Patterning Challenges and Perspective Solutions for 5nm and Beyond
Ying Zhang, Applied Materials, Inc.