| AVS 56th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| TF-ThP1 Ultra Thin Cermet Resistor Films Deposited by DC Magnetron Sputtering V.V. Felmetsger, Tegal Corporation |
| TF-ThP2 Formation of DLC Films by Inert-gas Ion Beam Assist in a C10H8 Atmosphere S. Narita, I. Takano, Kogakuin University, Japan |
| TF-ThP3 Amorphous Carbon-Gold (a-C:Au) Thin Films Z. Montiel, S.E. Rodil, S. Muhl, Instituto de Investigaciones en Materiales-Universidad Nacional Autonoma de Mexico, L. Rodriguez, Instituto de Fisica-Universidad Nacional Autonoma de Mexico |
| TF-ThP4 Influence of Non-uniformity and Surface Morphology of Sputtering Deposited CdTe Thin Films in a Large-area on Energy Conversion Efficiency of Solar Cells J. Park, C. Lim, S. Ryu, Chosun University, Korea, N. Kim, Chonnam National University, Korea, W Lee, Chosun University, Korea |
| TF-ThP5 Spatial Resistivity Distribution of Transparent Conducting Impurity-doped ZnO Thin Films Deposited on Substrates by DC Magnetron Sputtering J. Oda, J. Nomoto, M. Konagai, T. Miyata, T. Minami, Kanazawa Institute of Technology, Japan |
| TF-ThP6 In-situ Analyses on Negative Ions in the Sputtering Process to Deposit Al doped ZnO Films N. Tsukamoto, D. Watanabe, Aoyama Gakuin University, Japan, N. Ito, Panasonic Electric Works Co., Ltd., Japan, N. Oka, Y. Sato, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP7 Properties of Si-DLC Thin Films Prepared by Ion Beam Assist in a C12H26 Atmosphere T. Hara, I. Takano, Kogakuin University, Japan |
| TF-ThP8 Influence of Microstructure and Surface Morphology on Photofunctional Properties of Titanium Dioxide Film Prepared by Reactive Magnetron Sputtering K. Tanaka, I. Takano, Kogakuin University, Japan |
| TF-ThP9 High Rate Deposition of SnO2-based Transparent Conductive Films by Reactive Sputtering with Impedance Control Method Y. Muto, Y. Nishi, K. Hirohata, N. Tsukamoto, N. Oka, Y. Sato, Aoyama Gakuin University, Japan, Y. Iwabuchi, H. Kotsubo, Bridgestone Corporation, Japan, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP10 Fabrication of Gallium Oxide Films using Ion-Beam Assisted Deposition T. Ichinohe, Tokyo National College of Technology, Japan, M. Ohshima, S. Masaki, T. Kawasaki, TDY Inc., Japan, M. Obinata, TOHNIC Inc., Japan, S. Takeda, H. Hino, Nippon Light Metal Company, Ltd., Japan |
| TF-ThP11 Electrical and Optical Properties of Nb-doped TiO2 Films Deposited by dc Magnetron Sputtering using a Slightly Reduced Nb-doped TiO2-x Ceramic Targets Y. Sato, Y. Sanno, C. Tasaki, N. Oka, Aoyama Gakuin University, Japan, T. Kamiyama, AGC Ceramics Co. Ltd., Japan, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP12 Ultra High Rate Depositions of Various Transparent Conductive Oxide Films of AZO, ITO and ATO by Reactive Magnetron Sputtering Y. Nishi, K. Hirohata, Y. Muto, Y. Kawase, N. Tsukamoto, N. Oka, Y. Sato, Aoyama Gakuin University, Japan, Y. Iwabuchi, H. Kotsubo, Bridgestone Co., Japan, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP13 Electrical Resistivity Change of Al:ZnO Thin Films Dynamically Deposited by Bipolar Pulsed DC Sputtering with a Remote Plasma Source W. Yang, J. Joo, Kunsan National University, Republic of Korea |
| TF-ThP14 Photo-functional Properties of TiO2/W-TiO2/TiO2 Films Prepared by Reactive Magnetron Sputtering H. Shukur, K. Komiyama, M. Sato, I. Takano, Kogakuin University, Japan |
| TF-ThP15 Resistivity Characteristics of Transparent Conducting Impurity-doped ZnO Films for Use in Oxidizing Environments at High Temperatures J. Nomoto, M. Konagai, T. Miyata, T. Minami, Kanazawa Institute of Technology, Japan |
| TF-ThP16 Effect of DC bias on the Characteristics of Low Temperature Silicon-Nitride Films Deposited by Internal Linear Inductively Coupled Plasma Source G.H. Gweon, J.H. Lim, S.P. Hong, G.Y. Yeom, Sungkyunkwan University, Korea |
| TF-ThP17 Characterization of Structural Modification in Columnar Thin Films produced by Ion-Assisted Glancing Angle Deposition J.B. Sorge, University of Alberta, Canada, M.J. Brett, NRC National Institute for Nanotechnology, Canada |
| TF-ThP18 Structural and Electrical Characterization of rf Magnetron Sputtered Aluminum Doped Zinc Oxide K. Braam, M. Kyslinger, J. Doyle, Macalester College |
| TF-ThP19 Effect of Silicon Content on the Resistivity of Tungsten Silicon Film C. Lo, D. Draper, P. McDonald, R. Mathew, Praxair Electronics |
| TF-ThP20 Effect of Process Parameters on the Growth and Properties of ATO Films Prepared on Flexible Substrate at Room Temperature S.U. Lee, B.Y. Hong, Sungkyunkwan University, Korea |
| TF-ThP21 Development of a Transparent Barrier Layer for CdTe Thin Film Solar Cells Deposited on Flexible Foil Substrates D.R. Hodges, V. Palekis, E. Stefanakos, C.S. Ferekides, University of South Florida |
| TF-ThP22 Design and Fabrication of Optical Thin Films for Remote Sensing Instrument C.N. Hsiao, H.P. Chen, P.K. Chiu, W.H. Cho, Y.W. Lin, National Applied Research Laboratories, Taiwan, D.P. Tsai, National Applied Research Laboratories and National Taiwan University |
| TF-ThP23 Effect of Vacuum Annealing on Charge Transport and Trapping in a-SiC:H/c-Si Heterostructures A. Nazarov, I. Tatarchuk, Y. Gomeniyuk, A. Vasin, A. Rusavskii, V. Stepanov, V. Lysenko, NASU, Ukraine, S. Ashok, The Pennsylvania State University |
| TF-ThP24 Photoelectron Emission Properties and Work Function of Sn-doped In2O3 Films A. Takasaki, Y. Sato, N. Oka, Aoyama Gakuin University, Japan, F. Utsuno, K. Yano, Idemitsu Kosan Co., Ltd., Japan, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP25 Enhanced Light-Emission Characteristics and Analyses of Electronic Band Structure of 2-TNATA / MoOx for an Efficient Hole-Injection in Organic Light-Emitting Diodes J.W. Kwon, J.T. Lim, G.Y. Yeom, Sungkyunkwan University, Korea |
| TF-ThP26 Unusual Properties of InN Epilayers Probed by Photoluminescence F.I. Lai, W.T. Lin, Yuan-Ze University, Taiwan, W.-C. Chen, C.N. Hsiao, National Applied Research Laboratories, Taiwan, S.Y. Kuo, Chang Gung University, Taiwan, Y.K. Liu, J.L. Shen, Chung Yuan Christian University, Taiwan |
| TF-ThP27 Thermophysical Properties of Alq3 and α-NPD Films Measured by Nanosecond Thermoreflectance Technique N. Oka, K. Kato, Aoyama Gakuin University, Japan, N. Ito, Panasonic Electric Works Co., Ltd., Japan, T. Yagi, N. Taketoshi, T. Baba, National Metrology Institute of Japan, AIST, Japan, Y. Sato, Y. Shigesato, Aoyama Gakuin University, Japan |
| TF-ThP28 Characterization of the Defects in Intrinsic Nanocrystalline Silicon Thin Films Deposited by an Internal-ICP H.C. Lee, I.K. Kim, G.Y. Yeom, Sungkyunkwan University, Korea |
| TF-ThP29 Damages to Fatigue and Retention Characteristics of BLT Capacitors Fabricated by Damascene Process with High-pressure Process W Lee, S Shin, Chosun University, Korea, N. Kim, Chonnam National University, Korea |
| TF-ThP30 Surface Roughening of ZnO Films by Atomic Layer Deposition F.C. Hsieh, M.Y. Tsai, C.C. Kei, C.C. Yu, W.H. Cho, C.Y. Su, C.S. Yu, D.R. Liu, C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China |
| TF-ThP31 Glancing Angle Deposited Metallic Nano-Structured Thin Films for Surface Enhanced Fluorescence and Biosensing in Water C. Khare, Leibniz-Institut of Surface Modification, Germany, A. Karabchevsky, I. Abdulhalim, Ben Gurion University of the Negev, Israel, C. Patzig, Leibniz-Institut of Surface Modification, Germany, B. Fuhrmann, Martin-Luther-University Halle, Germany, B. Rauschenbach, Leibniz-Institut of Surface Modification, Germany |
| TF-ThP33 Molecular Layer Deposition of Organic Films for EUV Photoresists H. Zhou, P.W. Loscutoff, S.F. Bent, Stanford University |
| TF-ThP34 Time-Resolved FTIR Spectroscopy During ALD B.A. Sperling, J.E. Maslar, W.A. Kimes, D.R. Burgess, Jr., E.F. Moore, National Institute of Standards and Technology |
| TF-ThP35 Characteristics of Thin Films Deposition of Ruthenium on Various SiO2 Substrates by Remote Plasma Atomic Layer Deposition J.S. Lee, T.Y. Park, D.O. Kim, H.T. Jeon, Hanyang University, Republic of Korea, K.H. Lee, B.C. Cho, IPS R&D Center, Korea, M.S. Kim, H.B. Ahn, Air Product Korea |
| TF-ThP36 Electrical Characteristics of Lanthanum Oxide with SiO2 Buffer Layer using Remote Plasma Atomic Layer Deposition (RPALD) Method H.R. Lee, S.H. Woo, H.C. Kim, J.S. Lee, H.G. Kim, Y.C. Kim, H.T. Jeon, Hanyang University, Republic of Korea |
| TF-ThP37 Chemical Vapor Deposition of Samarium Doped Ceria from Metal-Organic Solid Precursors T.-S. Oh, D. Boyd, S. Haile, Caltech |
| TF-ThP38 Characterization of OTFT Fabricated Using Ink Jet Combined with Imprint Technology K.H. Kim, K.H. Eum, I.S. Chung, Sungkyunkwan University, Korea |
| TF-ThP39 Fabrication and Characterization of Ink Jet Processed Organic Thin Film Transistors with Poly-4-Vinylphenol (PVP) Dielectric K.H. Eum, K.H. Kim, Y.K. Son, I.S. Chung, Sungkyunkwan University, Korea |
| TF-ThP40 Improvement of Ohmic Contact Property of a Inkjet Printed TIPS-pentacene Schottky Diode by Employing SAM and PEDOT:PSS Layers J.M. Kwon, K.H. Kim, J.H. Heo, I.S. Chung, Sungkyunkwan University, Korea |
| TF-ThP41 Solution-derived Nanocomposite Materials for Photovolytaics E. Ryabova, NViA, M. Shkolnikov, ADCO-Engineering |
| TF-ThP42 Experimental Evaluation of Cheap, Overly Abundant Semiconductor Materials for Wide-Spread Photovoltaic Applications K. Davis, S. Nason, N. Hickman, Florida Solar Energy Center |
| TF-ThP43 Investigation of Microstructure, Surface Morphology, and Hardness Properties of PtIr Films by Magnetron Sputtering C.-T. Lee, B.H. Liou, C.-M. Chang, Y.W. Lin, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan |
| TF-ThP44 Effect of Hydrogen Plasma Pretreatment on Superconformal Cu Gap-Filling of Trench with Ru Barrier Metal H.K. Moon, S. Kim, C.R. Jung, SungKyunkwan University, South Korea, W. Kim, H. Kim, Pohang University of Science and Technology, Korea, N.-E. Lee, SungKyunkwan University, South Korea |