AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP38
Characterization of OTFT Fabricated Using Ink Jet Combined with Imprint Technology

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: K.H. Kim, Sungkyunkwan University, Korea
Authors: K.H. Kim, Sungkyunkwan University, Korea
K.H. Eum, Sungkyunkwan University, Korea
I.S. Chung, Sungkyunkwan University, Korea
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We fabricated organic thin film transistor using ink jet printing combined with a nano imprint. The channel length of OTFT were in the range between 2 um and 7 um. TIPS pentacene was used as an active material to achieve the better mobility. Additionally, Poly-4-vinylphenol (PVP) was chosen as a gate insulator. All materials including Ag electrode were prepared using ink jet printer (UJ-200) on polyethersulphone (PES) substrate. The physical properties were analyzed using SPM and SEM. The electrical characterization was done using Keithley-4200.