AVS 56th International Symposium & Exhibition | |
Thin Film | Thursday Sessions |
Session TF-ThP |
Session: | Aspects of Thin Films Poster Session |
Presenter: | C.-T. Lee, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan |
Authors: | C.-T. Lee, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan B.H. Liou, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan C.-M. Chang, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan Y.W. Lin, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan |
Correspondent: | Click to Email |
Pt1-xIrx films with x = 22.76-63.25 are fabricated on (100) Si substrates at 400 ℃ by magnetron sputtering deposition. Effects of Ir content on the microstructure, morphology and hardness of PtIr films are investigated by field emission scanning electron microscopy, X-ray diffraction, atomic force microscopy and nanoindentation system. The columnar structures are observed by field emission scanning electron microscopy. X-ray diffraction analysis revealed that PtIr films had preferred orientation along Pt(111) as Ir content is below 50.84 at.%. When the Ir content is more than 50.84 at.%, the PtIr film had another preferred orientation, Ir(111).The surface morphology is analyzed by atomic force microscopy. Roughness of PtIr films is decreased with increased Ir content. The hardness of all PtIr films is under 20 GPa. It is found the maximum hardness of PtIr films is about 14.9 GPa as Ir content is 57.9 at.%.