AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP30
Surface Roughening of ZnO Films by Atomic Layer Deposition

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: F.C. Hsieh, National Applied Research Laboratories, Taiwan, Republic of China
Authors: F.C. Hsieh, National Applied Research Laboratories, Taiwan, Republic of China
M.Y. Tsai, National Applied Research Laboratories, Taiwan, Republic of China
C.C. Kei, National Applied Research Laboratories, Taiwan, Republic of China
C.C. Yu, National Applied Research Laboratories, Taiwan, Republic of China
W.H. Cho, National Applied Research Laboratories, Taiwan, Republic of China
C.Y. Su, National Applied Research Laboratories, Taiwan, Republic of China
C.S. Yu, National Applied Research Laboratories, Taiwan, Republic of China
D.R. Liu, National Applied Research Laboratories, Taiwan, Republic of China
C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China
Correspondent: Click to Email
ZnO films were deposited by atomic layer deposition (ALD) on glass at 40oC. The films were studied by Atomic force microscope (AFM), X-ray diffraction (XRD), and contact angle measurements. The root mean square (RMS) roughness of ZnO increases with increasing the number of growth cycles. According to the XRD analysis, the crystalline phase becomes apparent when the growth cycle is increased. The contact angle decreases substantially at 400 cycles and the film reveals rough hydrophilic. The surface roughening of ZnO films can be turned by the growth cycle at this lower temperature due to the presence of ZnO nanocrystals.