AVS 56th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP44
Effect of Hydrogen Plasma Pretreatment on Superconformal Cu Gap-Filling of Trench with Ru Barrier Metal

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Aspects of Thin Films Poster Session
Presenter: H.K. Moon, SungKyunkwan University, South Korea
Authors: H.K. Moon, SungKyunkwan University, South Korea
S. Kim, SungKyunkwan University, South Korea
C.R. Jung, SungKyunkwan University, South Korea
W. Kim, Pohang University of Science and Technology, Korea
H. Kim, Pohang University of Science and Technology, Korea
N.-E. Lee, SungKyunkwan University, South Korea
Correspondent: Click to Email
In this work, effects of hydrogen plasma pretreatment on superconformal Cu gap-filling of the nano-scale trench with atomic-layer –deposited (ALD) Ru barrier metal were investigated. For this purpose, hydrogen plasma pretreatments on ALD-Ru layer were carried to control the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD). As the plasma pretreatment time increases, Cu nucleation is suppressed increasingly. XPS and thermal desorption experiments of the pretreated ALD Ru surface showed that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation presumably due to inhibition of adsorption of Cu MO precursors. During Cu gap-filling of the sub 60-nm and ALD-Ru deposited trenches without the plasma pretreatment, the entrance of the trenches during copper deposition was were easily blocked. On the contrary, for the plasma pretreated trenches, evolution of Cu layer in the trenches showed a dramatic reduction of over-hang near the entrance of the trench leading to superconformal filling of the nano-scale trench.