| AVS 56th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | H.C. Lee, Sungkyunkwan University, Korea |
| Authors: | H.C. Lee, Sungkyunkwan University, Korea I.K. Kim, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Nano-, microcrystalline hydrogenated silicon(nc-, μc-Si:H) attracts much interest as a promising material for thin film solar cells with high performance and good stability compared to amorphous silicon thin film. The deposition of nc-, μc-Si:H has been carried out by using various methods such as hot-wire chemical-vapor deposition (HWCVD), photo-chemical vapor deposition (P-CVD), plasma-enhanced chemical-vapor deposition (PECVD), etc.
During the deposition of nano- micro- crystalline hydrogenated silicon, the defects are generated and the defects in the nanocrystalline silicon thin films can degrade the efficiency of the solar cell. Defects located at deep-gap or tail states in the disordered silicon films are of great importance for the electronic quality of these materials and these states will influence the performance of the solar cells.
In this study, we have investigated the defects in the nancrystalline silicon thin film as a function of crystallization of the nanocrystalline silicon thin film. The nanocrystalline silicon thin film was deposited by using an internal-type inductively coupled plasma system. Electron spin resonance (ESR) is a useful tool for the investigation of defects in amorphous, nano-, and micro- crystalline hydrogenated silcon thin film. The nanocrystalline silicon thin films were deposited on corning 1737 glass. Raman scattering spectroscopy, high resolution transmission electron microscopy, (HRTEM) and electron spin resonance(ESR) were used to evaluate film crystallinity, structural image, and defects in the film, respectively.