| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | GR+SS+NC-MoA1 Ultrahigh Vacuum Growth, Electrical Characterization, and Patterning of Graphene Nanostructures on Si- and C-Polar 6H-SiC Surfaces A. Sandin, Z. Wang, J.L. Tedesco, J.E. Rowe, North Carolina State University, R.J. Nemanich, Arizona State University |
| 2:20pm | GR+SS+NC-MoA2 Unique Stacking of Multi-Layer Graphene on 4HSiC(000-1) J. Hass, J.E. Millan-Otoya, N. Sharma, M. Sprinkle, F. Ming, W.A. de Heer, P.N. First, E.H. Conrad, Georgia Institute of Technology |
| 2:40pm | GR+SS+NC-MoA3 Invited Paper Ultrahigh Vacuum and RF Furnace Production of Graphene on SiC G.G. Jernigan, B.L. VanMil, D.K. Gaskill, J.C. Culbertson, P.M. Campbell, US Naval Research Laboratory |
| 3:20pm | GR+SS+NC-MoA5 Microscopic and Spectroscopic Studies of the Electronic Structure of Epitaxial Graphene on SiC (0001) N. Sharma, D. Oh, M. Sprinkle, Georgia Institute of Technology, C. Berger, CNRS Grenoble, France, W.A. deHeer, T.M. Orlando, P.N. First, Georgia Institute of Technology |
| 4:00pm | GR+SS+NC-MoA7 Structural and Electronic Properties of Epitaxial Graphene on SiC(0001) C. Riedl, D.S. Lee, J. Smet, L. Vitali, R. Ohmann, I. Brihuega, MPI for Solid State Research, Germany, A. Zakharov, Lund University, Sweden, C. Virojanadara, now at: Linköping University, Sweden, K. von Klitzing, K. Kern, U. Starke, MPI for Solid State Research, Germany |
| 4:20pm | GR+SS+NC-MoA8 Atomic Scale Properties of Epitaxial Graphene Grown on SiC G.M. Rutter, P.N. First, Georgia Institute of Technology, J.A. Stroscio, National Institute of Standards and Technology |
| 4:40pm | GR+SS+NC-MoA9 Invited Paper Layer-Dependent Properties of Epitaxial Graphene on Silicon Carbide*+ P.N. First, Georgia Institute of Technology |
| 5:20pm | GR+SS+NC-MoA11 Scanning Tunneling Spectroscopy of Epitaxial Graphene on SiC(0001) S. Nie, R. Feenstra, Carnegie Mellon University |