| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Monday Sessions |
| Session GR+SS+NC-MoA |
| Session: | Materials Issues in Graphene from SiC |
| Presenter: | U. Starke, MPI for Solid State Research, Germany |
| Authors: | C. Riedl, MPI for Solid State Research, Germany D.S. Lee, MPI for Solid State Research, Germany J. Smet, MPI for Solid State Research, Germany L. Vitali, MPI for Solid State Research, Germany R. Ohmann, MPI for Solid State Research, Germany I. Brihuega, MPI for Solid State Research, Germany A. Zakharov, Lund University, Sweden C. Virojanadara, now at: Linköping University, Sweden K. von Klitzing, MPI for Solid State Research, Germany K. Kern, MPI for Solid State Research, Germany U. Starke, MPI for Solid State Research, Germany |
| Correspondent: | Click to Email |
Graphene layers can be grown on a solid substrate by the controlled graphitization of SiC surfaces by high temperature annealing in ultra high vacuum (UHV). However, the exact control of the number of layers grown and their quality remains a problem. In the present work, we use angular resolved ultraviolet photoemission spectroscopy (ARUPS) from He II excitation and low energy electron diffraction (LEED) to count the number of layers continuously during the preparation procedure in the home laboratory thus avoiding laborious synchrotron experiments. The layer structure and homogeneity is further analyzed by Raman spectroscopy, core level photoemission spectroscopy (PES) and low-energy electron microscopy (LEEM) measurements. On such precisely prepared graphene samples, we investigate their electronic structure using ARUPS and scanning tunneling spectroscopy (STS). The layer dependent shifting of the energetic position of the Dirac point and the detailed structure of the π-band dispersion are analyzed both with momentum and spatial resolution.