| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Monday Sessions |
| Session GR+SS+NC-MoA |
| Session: | Materials Issues in Graphene from SiC |
| Presenter: | J. Hass, Georgia Institute of Technology |
| Authors: | J. Hass, Georgia Institute of Technology J.E. Millan-Otoya, Georgia Institute of Technology N. Sharma, Georgia Institute of Technology M. Sprinkle, Georgia Institute of Technology F. Ming, Georgia Institute of Technology W.A. de Heer, Georgia Institute of Technology P.N. First, Georgia Institute of Technology E.H. Conrad, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Diffraction data have shown that multilayer graphene grown on the polar (000-1) face of 4H-SiC contains large, flat domains and rotational stacking faults approximately every 2 layers.1 Such faults are particularly interesting because it has been demonstrated that rotational faults in bi- and tri- layer graphene films decouple adjacent sheets, thereby preserving the unique lattice symmetry and linear dispersion found for a single, isolated sheet.1-3 This is in contrast with few-layer graphite, which grows in a Bernal stacking arrangement on the opposite polar (0001) face. Scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) data exhibit a number of rotational domains in registry with the SiC substrate. Data will be presented which elucidate particular stacking orientations over micron scale domains. Scanning tunneling spectroscopy (STS) results will be interpreted in the context of symmetry breaking between sheets.
1J. Hass, F.Varchon, J. E. Millán-Otoya, M. Sprinkle, N. Sharma, W.A. de Heer, C. Berger, P.N. First, L. Magaud, E.H. Conrad, Phys. Rev. Lett. 100, 125504 (2008).
2J.M.B. Lopes dos Santos, N.M.R. Peres, A.H. Castro Neto, Phys. Rev. Lett. 99, 256802 (2007).
3S. Latil, V. Meunier, L. Henrard, Phys. Rev. B. 76, 201402(R) (2007).