| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Monday Sessions |
| Session GR+SS+NC-MoA |
| Session: | Materials Issues in Graphene from SiC |
| Presenter: | P.N. First, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Epitaxial graphene grown on single-crystal silicon carbide has been proposed as a platform for graphene-based nanoelectronics.1 This new electronic material shows great potential, but also poses a number of challenges. I will discuss results from several surface characterization techniques that determine the structure and electronic properties of this system. In particular, scanning tunneling microscopy and spectroscopy are used to study the electronic and geometric structure versus the graphene layer index for epitaxial graphene on SiC(0001).2 Additional measurements show that the structure of graphene grown on SiC(000 -1) differs dramatically from that grown on SiC(0001). Finally, results that address the physics of metal contacts to graphene will be presented.
*Work supported in part by NSF, NRI-INDEX, and the W. M. Keck Foundation. +Work done in collaboration with G. M. Rutter, J. Hass, N. Sharma, T. Li, E. H. Conrad, C. Berger, and W. A. de Heer at the Georgia Institute of Technology, and J. N. Crain, N. P. Guisinger, and J. A. Stroscio at the NIST Center for Nanoscale Science and Technology
1 C. Berger et al., J. Phys. Chem. B 108, 19912 (2004).
2 G. M. Rutter et al., Science 317, 219 (2007) ; Phys. Rev. B 76, 235416 (2007); J. Vac. Sci. Technol. A (in press).