AVS 54th International Symposium | |
Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS2+MS-MoM1 Invited Paper Challenges for Microwave Plasma Etching of Low-k Dielectrics T. Nozawa, M. Inoue, T. Nishizuka, Tokyo Electron LTD Japan |
8:40am | PS2+MS-MoM3 High Frequency Capacitively Coupled Plasma for Low Ion Energy Dual Damascene Etching A. Marakhtanov, E.A. Hudson, K. Takeshita, O. Turmel, Lam Research Corp. |
9:00am | PS2+MS-MoM4 Energy Distribution of Bombarding Ions, Etch Selectivity and Profile Control in Plasma Etching of Dielectrics F.L. Buzzi, Y.-H. Ting, A.E. Wendt, University of Wisconsin-Madison |
9:20am | PS2+MS-MoM5 Etch Plasma Chemistry and Film Variability Effects on Dual Damascene Patterning of Porous Ultra-low k Materials C.B. Labelle, AMD, Inc., J. Arnold, IBM Research, H. Wendt, Infineon Tech., R.P. Srivastava, Chartered Semicon. Mfg Ltd., K. Kumar, Y. Choi, H. Yusuff, S. Molis, C. Parks, C. Dziobkowski, M. Chace, A. Passano, L. Tai, IBM Microelectronics, D. Kioussis, AMD, Inc., J. Yamartino, D. Restaino, L. Nicholson, IBM Microelectronics |
9:40am | PS2+MS-MoM6 Surface Roughening Mechanisms during Porous SiOCH Etching Processes F. Bailly, CNRS/IMN - France, T. David, CEA/LETI-MINATEC - France, T. Chevolleau, M. Darnon, CNRS/LTM - France, C. Cardinaud, CNRS/IMN - France |
10:20am | PS2+MS-MoM8 Invited Paper Design for Manufacturability through Design-Process Integration A. Neureuther, University of California, Berkeley |
11:00am | PS2+MS-MoM10 Feature Profile Simulation for Organic Low-k Etching in 2f-CCP in H2/N2 T.Y. Yagisawa, T. Makabe, Keio University, Japan |
11:20am | PS2+MS-MoM11 Removal of Scallops formed during Deep Via Etching for 3D Interconnects Y.-D. Lim, S.-H Lee, C.-H. Ra, W.J. Yoo, Sunkyunkwan University, Korea |
11:40am | PS2+MS-MoM12 High-rate Deep Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique M.C.M. van de Sanden, M.A. Blauw, Eindhoven University of Technology, Netherlands, F. Roozeboom, NXP Semiconductors Research, W.M.M. Kessels, Eindhoven University of Technology, Netherlands |