| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS+EM+TF-ThA1 Atomic-Layer Etching (ALE) of Nickel or Nickel Oxide Films by Hexafluoroacetylacetone (HFAC) Molecules Abdulrahman Basher, M. Isobe, T. Ito, K. Karahashi, Osaka University, Japan, M. Kiuchi, National Institute of Advanced Industrial Science and Technology (AIST), Japan, T. Takeuchi, Nara Women's University, Japan, S. Hamaguchi, Osaka University, Japan |
| 2:40pm | PS+EM+TF-ThA2 Thermal Atomic Layer Etching of HfO2 Using HF for Fluorination and TiCl4 for Ligand-Exchange Y. Lee, Steven George, University of Colorado at Boulder |
| 3:00pm | PS+EM+TF-ThA3 Rapid thermal-cyclic Atomic Layer Etching of SiO2 Using Infrared Annealing Nobuya Miyoshi, Hitachi High-Technologies, Japan, H. Kobayashi, K. Shinoda, M. Kurihara, Hitachi, Japan, K. Kawamura, K. Ookuma, Y. Kouzuma, M. Izawa, Hitachi High-Technologies, Japan |
| 3:20pm | PS+EM+TF-ThA4 The Smoothing Effect in Atomic Layer Etching (ALE) Keren Kanarik, S. Tan, W. Yang, I.L. Berry, T.B. Lill, Y. Pan, R.A. Gottscho, Lam Research Corporation |
| 4:00pm | PS+EM+TF-ThA6 Invited Paper Prospects for Combining ALD and ALE in a Single Chamber Mike Cooke, Oxford Instruments, UK |
| 4:40pm | PS+EM+TF-ThA8 Low Temperature Surface Preparation of GaN Substrates for Plasma Assisted-Atomic Layer Epitaxial Growth Samantha G. Rosenberg, U.S. Naval Research Laboratory, D.J. Pennachio, University of California, Santa Barbara, M. Munger, SUNY Brockport, C. Wagenbach, Boston University, V.R. Anderson, U.S. Naval Research Laboratory, S.D. Johnson, U. S. Naval Research Laboratory, N. Nepal, A.C. Kozen, J.M. Woodward, U.S. Naval Research Laboratory, Z.R. Robinson, SUNY Brockport, K.F. Ludwig, Boston University, C.J. Palmstrøm, University of California, Santa Barbara, C.R. Eddy, Jr., U. S. Naval Research Laboratory |
| 5:00pm | PS+EM+TF-ThA9 Chemical Interactions with Alkali Compounds for Controlling the Transition between Thermal HF-based Atomic Layer Etching and Deposition John Hennessy, Jet Propulsion Laboratory, California Institute of Technology |
| 5:20pm | PS+EM+TF-ThA10 Invited Paper Selective Processing to Enable High Fidelity Control for the 5 nm Node Benjamen Rathsack, Tokyo Electron America, Inc., A. Ranjan, TEL Technology Center, America, LLC., P.L.G. Ventzek, Tokyo Electron America, Inc., H. Mochiki, Tokyo Electron Miyagi, Ltd., Japan, J. Bannister, Tokyo Electron America, Inc. |