| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
| Session PS+EM+TF-ThA |
| Session: | Atomic Layer Processing: Integration of ALD and ALE |
| Presenter: | Keren Kanarik, Lam Research Corporation |
| Authors: | K.J. Kanarik, Lam Research Corporation S. Tan, Lam Research Corporation W. Yang, Lam Research Corporation I.L. Berry, Lam Research Corporation T.B. Lill, Lam Research Corporation Y. Pan, Lam Research Corporation R.A. Gottscho, Lam Research Corporation |
| Correspondent: | Click to Email |
Since the 1970s, the semiconductor industry has fabricated electronic circuits using a pattern-transfer approach that is remarkably reminiscent of the etching artform used centuries ago. Only, now, the patterns are a million times smaller, and require etching to within a few atoms on features less than 40 atoms wide. The most advanced etching technique in production today is called atomic layer etching (ALE). To the extent that an ALE process behaves ideally – with high ALE synergy and self-limiting behavior – the primary benefit is improved uniformity across all length scales: at the surface, between different aspect ratios, and across the full wafer. The focus here will be on the atomic-scale topography of the surface left behind after etching.
The purpose in this presentation is to introduce a new ALE benefit – the smoothing effect. By this, we mean that, beyond maintaining surface topography, ALE can improve the surface smoothness (ref 1). We will show that the effect in directional ALE is pervasive across different material systems, including Si, C, Ta, and Ru. We will propose explanations for the ALE smoothing phenomenon, and identify possible applications for this effect both inside and outside the semiconductor industry.
Ref 1: Kanarik, Tan, and Gottscho. J. Phys. Chem. Rev. submitted April 1, 2018.