AVS 65th International Symposium & Exhibition
    Plasma Science and Technology Division Thursday Sessions
       Session PS+EM+TF-ThA

Paper PS+EM+TF-ThA9
Chemical Interactions with Alkali Compounds for Controlling the Transition between Thermal HF-based Atomic Layer Etching and Deposition

Thursday, October 25, 2018, 5:00 pm, Room 104C

Session: Atomic Layer Processing: Integration of ALD and ALE
Presenter: John Hennessy, Jet Propulsion Laboratory, California Institute of Technology
Correspondent: Click to Email

The use of anhydrous hydrogen fluoride (HF) as a precursor can result in a variety of atomic layer deposition (ALD) processes for thin films like MgF2, AlF3 and LiF, with good optical properties in the deep ultraviolet. Cyclic exposure to HF and several organoaluminum compounds including trimethylaluminum (TMA), can also result in the thermal atomic layer etching (ALE) of some oxide films like Al2O3. In this work we show that the introduction of alkali halide compounds (such as LiF or KBr) into the reactor during this cyclic exposure can dramatically alter the deposition and etch conditions at a given substrate temperature. This occurs via the formation of an intermediate complex between the metalorganic precursor and the alkali compounds, that then enhances the removal of the surface fluoride created during the preceding HF exposure. Although the etch rate can be enhanced via this interaction at a given substrate temperature, the process remains self-limiting overall.

This approach provides a pathway to the low temperature (~100 °C) thermal ALE of Al2O3. This can be useful for substrate-sensitive applications where exposure to high temperature or energetic plasmas is undesirable. The interaction of TMA and the alkali halide also results in approaches for the spatially-selective deposition of AlF3, or the spatially-selective etching of Al2O3.

We have utilized this combination of ALE and ALD to gently remove the native oxide from metallic aluminum and replace it with AlF3 for a variety of optics and sensing applications at JPL. This can be performed by variation of the substrate temperature to switch continuously from ALE-mode to ALD-mode, or by variation of the aluminum precursor to tune the chemical interactivity with the alkali compounds. Fabricated devices made with this concept are relevant for a variety of NASA astrophysics and planetary science applications at ultraviolet wavelengths.