| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM2-ThM1 Invited Paper Challenges and Materials Solutions for Memristive Devices (ReRAM) Jianhua(Joshua) Yang, HP Labs |
| 8:40am | EM2-ThM3 Invited Paper Physical Mechanisms and Scaling of the Resistive Memory (ReRAM) Daniele Ielmini, S. Balatti, S. Ambrogio, Politecnico di Milano, Italy |
| 9:20am | EM2-ThM5 Invited Paper Variability of Metal Oxide Based RRAM: Challenges and Opportunities An Chen, GLOBALFOUNDRIES |
| 11:00am | EM2-ThM10 Invited Paper High-K Development for DRAM, NAND, and ReRAM Applications Nirmal Ramaswamy, Micron Technology |
| 11:40am | EM2-ThM12 Invited Paper Resistive Switching Characteristics and Mechanism in Oxide Conductive-Bridge RAM Ming Liu, Q. Liu, H.B. Lv, S.B. Long, Chinese Academy of Sciences, China |