| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM2-ThM |
| Session: | High-K Dielectrics for ReRAM and RAM |
| Presenter: | Ming Liu, Chinese Academy of Sciences, China |
| Authors: | M. Liu, Chinese Academy of Sciences, China Q. Liu, Chinese Academy of Sciences, China H.B. Lv, Chinese Academy of Sciences, China S.B. Long, Chinese Academy of Sciences, China |
| Correspondent: | Click to Email |
Conductive bridging RAM (CBRAM) has been intensively investigated for the application of next generatin nonvolatile memories due to its excellent scalability and superior switching performances [1-2]. Generally, the device forms by an ion-conducting insulator sandwiched between an oxidezable electrode (i.e. Cu or Ag) and an inert electrode (i. e. Pt or W). The resistance switching is based on the the formation and annihilation of nanoscale metallic conductive filament (CF) in the ion-conducting insultator under the external power. This kind of filament utilizes composition of metal ions transferring from the oxidizable electrode to the inert electrode due to cation redox reaction [2]. Deep understanding of the CF dynamic growth mechanism and development of controllable CF growth method will help to guide the design of CBRAM devices with desirable properties. Using binary oxide, such as ZrO and HfO , we successfully obtained some CBRAM devices with excellent resistive switching performances [3-4]. Based on the variable temperature testing and the advanced SEM and TEM analysising, some fundamental issues related to the resistive switching effect, including the morphologies, chemical compositions and dynamic growth/dissulution of CFs were directly addressed in various CBRAM systems [5]. In addtion, using “electrical engineering”, we demonstrated that the CF growth process can be controlled by modulating distribution electric field inside ion-conducting insulator, which greatly improving the uniformity of the CBRAM device [6].
Reference:
[1]. R. Waser, M. Aono, Nat. Mater. 2007, 6, 833.
[2]. J. J. Yang, D. B. Strukov, D. R. Stewart, Nat. Nanotechnol. 2013, 8, 13.
[3]. Q. Liu, S. Long, W. Wang, S. Tanachutiwat, Y. Li, Q. Wang, M. Zhang, Z. Huo, J. Chen, M. Liu, IEEE Electron Device Lett. 2010, 31, 1299.
[4]. Y. Li, H. Lv, Q. Liu, S. Long, M. Wang, H. Xie, K. Zhang, Z. Huo, M. Liu, Nanoscale 2013, 5, 4785.
[5]. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Adv. Mater. 2012, 24, 1844.
[6]. Q. Liu, S. long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, M. Liu, ACS Nano 2010, 4, 6162.